onsemi Single FETs, MOSFETs NTMFS4841NT1G

Description
MOSFET N-CH 30V 8.3A/57A 5DFN
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Description
MOSFET N-CH 30V 8.3A/57A 5DFN
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 488-NTMFS4841NT1GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTMFS4841NT1GTR-ND
Single FETs, MOSFETs 488-NTMFS4841NT1GTR-ND
MOSFET N-CH 30V 8.3A/57A 5DFN

MOSFET N-CH 30V 8.3A/57A 5DFN

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 - NTMFS4841NT1G - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NT1G - 060668-NTMFS4841NT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NT1G
060668-NTMFS4841NT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NT1G 060668-NTMFS4841NT1G
Manufacturer: ON Semiconductor Win Source Part Number: 060668-NTMFS4841NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.3A (Ta), 57A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1436pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 060668-NTMFS4841NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.3A (Ta), 57A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1436pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET NFET 30V 57A 7MOHM

MOSFET NFET 30V 57A 7MOHM

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4841NT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFS4841NT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFS4841NT1G
MOSFET N-CH 30V 8.3A/57A 5DFN

MOSFET N-CH 30V 8.3A/57A 5DFN

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 488-NTMFS4841NT1GTR-ND NTMFS4841NT1G 060668-NTMFS4841NT1G NTMFS4841NT1G NTMFS4841NT1G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NT1G MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN, 5 Leads DFN5 SO-8; SOT3; 5-DFN (5x6) (8-SOFL) 8-PowerTDFN, 5 Leads
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT)
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