Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Manufacturer: Infineon Technologies
Win Source Part Number: 1046811-IRFB3407ZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Family Name: IRFB3407ZPbF
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4750pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.4 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): BUK9506-75B,127; BUK9506-75B; PHP165NQ08T; PHP165NQ08T,127;
Introduction Date: March 15, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
MOSFET N-CH 75V 120A TO220AB Product overview: IRFB3407ZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3407ZPBF can be used for catalog matching and distributor lookup.
N-Channel 75V 120A (Tc) 230W (Tc) Through Hole TO-220AB
MOSFET, N-CH, 75V, 122A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:122A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 75V 120A TO220AB
MOSFET N-CH 75V 120A TO220AB
| Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFB3407ZPBF | 1046811-IRFB3407ZPBF | 278-IRFB3407ZPBF | IRFB3407ZPBF-ND | IRFB3407ZPBF | 49AC0308 | IRFB3407ZPBF | IRFB3407ZPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3407ZPBF | 75V 120A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 75V, 122A, To-220Ab; Channel Type Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO22 | TO-220; SOT3; TO-220AB | Tube | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| Packing Method | Tube; Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube | ||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | |||||
| PD | 230000 milliwatts | 230 milliwatts | 230000 milliwatts |
