Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD60N03 NTD60N03

The NTD60N03 is an N-channel MOSFET designed for low-voltage, high-speed switching in power supplies, converters, and motor control circuits. It is packaged in a DPAK (Style 2) surface-mount case with dimensions of 6.22 mm maximum length, 6.73 mm maximum width, and 2.38 mm maximum height. The device has a continuous drain current rating of 60 A, a drain-to-source breakdown voltage of 28 V, and a maximum on-resistance of 7.5 mΩ at 10 V gate drive. Its junction-to-case thermal resistance is 1.65 °C/W, and the operating temperature range is -55°C to 150°C. The part meets RoHS compliance and is rated for AEC-Q200 qualification.