Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD30N02T4G NTD30N02T4G

The NTD30N02T4G is a 30 A, 24 V N-channel MOSFET in a DPAK package, designed for low-voltage, high-speed switching in power supplies, converters, motor controls, and bridge circuits. It features a maximum continuous drain current of 30 A, a drain-to-source breakdown voltage of 24 V, and a typical on-resistance of 11.2 mΩ at 10 V gate drive. The device is Pb-free and rated for a junction temperature range of -55°C to 150°C. It meets RoHS standards and is supplied in a 2500-unit tape and reel packaging. Thermal resistance from junction to ambient is 120°C/W when mounted on a minimum recommended PCB pad area. The package dimensions conform to DPAK (CASE 369C-01), with a body size of 6.22 mm x 6.73 mm maximum.