MOSFET P-CH 100V 6.6A DPAK Product overview: IRFR9120NTRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 6.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 6.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR9120NTRLPBF can be used for catalog matching and distributor lookup.
IRFR9120 - HEXFET Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 731465-IRFR9120NTRLP
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 40W
Popularity: Low
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 6.6A
Rds On (Maximum) at Id, Vgs: 480mOhm at 3.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 27nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 350pF at 25V
P-Channel 100V 6.6A (Tc) 40W (Tc) Surface Mount D-Pak
P-Channel 100V 6.6A (Tc) 40W (Tc) Surface Mount D-Pak
P-Channel 100V 6.6A (Tc) 40W (Tc) Surface Mount D-Pak
MOSFET P-CH 100V 6.6A DPAK
MOSFET P-CH 100V 6.6A DPAK
MOSFET MOSFT PCh -6.5A 480mOhm 18nC
MOSFET, P-CH, -100V, -6.6A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFR9120NTRLPBF | IRFR9120NTRLPBF | 731465-IRFR9120NTRLPBF | 448-IRFR9120NTRLPBFDKR-ND | IRFR9120NTRLPBF | IRFR9120NTRLPBF | IRFR9120NTRLPBF | 34AC1752 |
| Product Name | 100V 6.6A DPAK MOSFET Transistor | FETs - Single - IRFR9120NTRLPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -100V, -6.6A, To-252Aa; Transistor Polarity Infineon | |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 39 milliwatts | 40000 milliwatts | 40000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |