Rochester Electronics Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| 0.35A, 250V, 7ohm, N-Channel Power MOSFET | |
| 1.5 A, 45V NPN Power Bipolar Junction Transistor | |
| 1.5 A, 60 V NPN Power Bipolar Junction Transistor | |
| 1.5 A, 80 V NPN Power Bipolar Junction Transistor | |
| 10 A, 100 V NPN Darlington Bipolar Power Transistor | |
| 100A, 55V, 0.0105ohm, N-Channel Power MOSFET, TO-220AB | |
| 100A, 75V, 0.0103ohm, N-Channel Power MOSFET, TO-220AB | |
| 100V OptiMOS Power Transistor | |
| 12V-300V N-Channel Power MOSFET | |
| 170W LDMOS Doherty power transistor for base station applications | |
| 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz | |
| 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz | |
| 20V-250V P-Channel Power MOSFET | |
| 20V-30V N-Channel Power MOSFET | |
| 22A, 75V, 0.064ohm, N-Channel Power MOSFET, TO-252 | |
| 240W LDMOS Power Transistor | |
| 250V-600V Small Signal/Small Power MOSFET | |
| 31A, 55V, 0.044ohm, N-Channel Power MOSFET, TO-252 | |
| 4.0 A, 60 V PNP Bipolar Power Transistor | |
| 4.0 A, 60 V PNP Power Bipolar Jucntion Transistor | |
| 4.0 A, 80 V PNP Darlington Bipolar Power Transistor | |
| 50A, 40V, 0.02ohm, N-Channel Power MOSFET, TO-252 | |
| 6.0 A, 100 V PNP Bipolar Power Transistor | |
| 60 V, 1 A NPN medium power transistor | |
| 60 V, 1 A PNP medium power transistor | |
| 600W Power LDMOS transistor | |
| 60V N-Channel Power MOSFET | |
| 60V OptiMOS Power MOSFET | |
| 77A, 75V, N-Channel Power MOSFET, TO-220AB | |
| 80 V, 1 A NPN power bipolar transistors | |
| 80 V, 1 A PNP medium power transistor | |
| A 350W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. | |
| BLA1011-200H - 200W LDMOS Avionics Power Transistor (Customer Special) | |
| BLA1011-300 - 300W LDMOS Avionics Power Transistor | |
| BLF1046 - UHF power LDMOS transistor | |
| BLF10M6LS200, Power LDMOS transistor, SOT502 (LDMOST) | |
| BLF175 - HF/VHF Power VDMOS Transistor | |
| BLF177R - HF/VHF Power VDMOS Transistor | |
| BLF184XR, Power LDMOS transistor, SOT1214 (ACC-4L) | |
| BLF202 - VHF Push-Pull Power VDMOS Transistor | |
| BLF242 - HF-VHF power MOS transistor | |
| BLF245B - VHF push-pull power MOS transistor | |
| BLF278 - VHF Push-Pull Power VDMOS Transistor | |
| BLF521 - UHF Power VDMOS Transistor | |
| BLF644P, Broadband power LDMOS transistor, SOT1228 (ACC-4L) | |
| BLF888D, UHF power LDMOS transistor, SOT539 (LDMOST) | |
| BLL1214-250 - HF/VHF Power Transistor | |
| BLS3135-65I - Microwave Power Transistor (Cus Special) | |
| BSB280N15 - 12V-300V N-Channel Power MOSFET | |
| BSC0588- N-Channel Power MOSFET | |
| BSC080N03 - 12V-300V N-Channel Power MOSFET | |
| BSC090N03 - 12V-300V N-Channel Power MOSFET | |
| BSP92 - Power Field-Effect Transistor, 0.26A, 250V, 12ohm, P-Channel, MOSFET | |
| BSZ088N03 - 12V-300V N-Channel Power MOSFET | |
| BSZ12DN20 - 12V-300V N-Channel Power MOSFET | |
| BSZ22DN20 - 12V-300V N-Channel Power MOSFET | |
| HF/VHF power MOS transistor | |
| IGBT POWER MODULE 62MM | |
| LDMOS Doherty Power Transistor | |
| LDMOS Power Transistor | |
| LDMOS RF Power Transistor | |
| Medium Power NPN Bipolar Power Transistor | |
| Medium Power NPN Darlington Bipolar Power Transistor | |
| MOSFET OptiMOS 3 Power-MOSFET, 30V, N-Channel Power MOSFET | |
| MOSFET, OptiMOS 3 Power-MOSFET, 30V | |
| MOSFET, OptiMOS 5 Power-MOSFET, 30 V | |
| N-Channel Power MOSFET | |
| OptiMOS 100V N-Channel Power MOSFET | |
| OptiMOS 3 Power Transistor, TRENCH >=100V | |
| OptiMOS 3 Power-MOSFET,75V | |
| OptiMOS 3 Power-Transistor, 80V | |
| OptiMOS 3 Power-Transistor. TRENCH >=100V | |
| OptiMOS 3 Power-Transistor | |
| OptiMOS 3 Power-TransistorTren ch 40 100V | |
| OptiMOS 3Power-MOSFET,80V Prench40<-<100V | |
| OptiMOS 5 power MOSFET 80V | |
| OptiMOS 5 power MOSFETs logic level | |
| OptiMOS 5 Power-MOSFET, 25V | |
| OptiMOS 5 Power-Transistor, 100 V | |
| OptiMOS 5 Power-Transistor, 100V | |
| OptiMOS 5 Power-Transistor, 150V | |
| OptiMOS 5, 25V Power MOSFET | |
| OptiMOS 60V power MOSFET | |
| OptiMOS N-Channel Power-MOSFET | |
| OptiMOS P3 Power-Transistor | |
| OptiMOS P3-Power-Transistor | |
| OptiMOS Power MOSFET | |
| OptiMOS power transistor 40V | |
| OptiMOS Power-MOSFET n-Channel | |
| OptiMOS Power-MOSFET Prench100V | |
| OptiMOS Power-MOSFET, 25V | |
| OptiMOS Power-MOSFET, 40V | |
| OptiMOS Power-MOSFET | |
| OptiMOS Power-Transistor, 60V | |
| OptiMOS-P Power-Transistor | |
| OptiMOS3 Power-MOSFET, 30V | |
| OptiMOS3 Power-Transistor | |
| OptiMOS5 power MOSFET 80V | |
| OptlMOS N-Channel Power MOSFET | |
| OptlMOS N-Channel Power-MOSFET | |
| PNP Bipolar Power Transistor | |
| Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 10A, 100V, PNP, TO-247, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 10A, 80V, NPN, TO-220AB, 3 Pin | |
| Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 2A, 80V, NPN, TO-225AA, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 2A, 80V, PNP, TO-220AB, 3 Pin | |
| Power Bipolar Transistor, 3A, 80V, NPN, TO-220AB, 3 Pin | |
| Power Bipolar Transistor, 3A, 80V, PNP, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 4A, 22V, PNP, TO-126, 3 Pin | |
| Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 4A, 32V, PNP, TO-126, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 4A, 32V, PNP, TO-225AA, 3 Pin | |
| Power Bipolar Transistor, 4A, 45V, NPN, TO-225AA, 3 Pin | |
| Power Bipolar Transistor, 4A, 60V, NPN, TO-225, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 4A, 80V, PNP, TO-225AA, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 6A, 100V, NPN, TO-220AB, 3 Pin | |
| Power Bipolar Transistor, 6A, 80V, NPN, TO-220AB, 3 Pin | |
| Power Bipolar Transistor, 6A, 80V, PNP, TO-220AB, 3 Pin | |
| Power Bipolar Transistor, 6A, 80V, PNP, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | |
| Power Bipolar Transistor | |
| Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 114A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 120A, 30V, 0.0033ohm, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 12A, 30V, 0.0091ohm, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 15A, 30V, 0.0032ohm, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 17A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 17A, 34V, 0.0054ohm, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 17A, 50V, 0.1ohm, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 18A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 19A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 212A I(D), 25V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 21A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 22A I(D), 25V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 29A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 29A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 31A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 37A, 120V, 0.024ohm, N-Channel, MOSFET | |
| Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 49A I(D), 40V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 60A I(D), 25V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 81A I(D), 40V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| Power Field-Effect Transistor, N-Channel, MOSFET | |
| Power Field-Effect Transistor | |
| Power LDMOS transistor, SOT1110 (CDFM8) | |
| Power LDMOS transistor, SOT1214 (ACC-4L) | |
| Power LDMOS transistor, SOT502 (LDMOST) | |
| Power LDMOS transistor | |
| Power-MOSFET 30V | |
| RF Power Discrete Transistors | |
| RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor | |
| Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5 | |
| SwitchMODE NPN SILICON PLANAR POWER TRANSISTOR | |
| UHF power LDMOS transistor | |
| UHF power MOS transistor |
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