Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW740BTM IRFW740BTM

The IRFW740BTM is a 400V N-channel MOSFET in a TO-263 (D2PAK) package, designed for high-efficiency switch mode power supplies and electronic lamp ballasts. It has a continuous drain current of 10A at 25°C, a drain-source on-state resistance of 0.54Ω at VGS=10V, and a typical gate charge of 41nC. The device is 100% avalanche tested, with a single-pulsed avalanche energy rating of 450mJ and a peak diode recovery dv/dt of 5.5V/ns. Operating and storage junction temperatures range from -55°C to 150°C. It meets RoHS standards and is packaged in tape and reel.