MOSFET N-CH 30V 12A/29A 8PQFN Product overview: IRFH3707TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH3707TRPBF can be used for catalog matching and distributor lookup.
N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
Manufacturer: Infineon Technologies
Win Source Part Number: 069470-IRFH3707TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (3x3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 29A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 8.1nC @ 4.5V
Max Input Capacitance: 755pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.4 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
12V-300V N-Channel Power MOSFET
MOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC
MOSFET N-CH 30V 12A/29A 8PQFN
MOSFET N-CH 30V 12A/29A 8PQFN
PQFN-8(3.1x3.1) MOSFETs ROHS
MOSFET, N-CH, 30V, 29A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFH3707TRPBF | IRFH3707TRPBFDKR-ND | 069470-IRFH3707TRPBF | IRFH3707TRPBF | IRFH3707TRPBF | IRFH3707TRPBF | IRFH3707TRPBF | IRFH3707TRPBF | 99AC3984 |
| Product Name | 30V 12A 29A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH3707TRPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 30V, 29A, Pqfn-8; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||
| Transconductance | 0.0170 kS | ||||||||
| PD | 2.8 milliwatts | 2800 milliwatts | 2800 milliwatts |
