The 1214GN-120E is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 uS pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is available in two package types, as well as mounted on a compact footprint 50 Ohm IN/OUT pallet, and is specifically designed for L-band pulsed primary radar applications. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 1214GN-120E |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
