This RF power transistor is designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. This device is suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.
RF Mosfet LDMOS (Dual) 50V 100mA 960MHz ~ 1.22GHz 19.6dB 1000W NI-1230-4S
Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
RF MOSFET LDMOS 50V NI1230
| Richardson RFPD | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Power MOSFET | RF Transistors |
| Product Number | AFV121KHSR5 | AFV121KHSR5-ND | AFV121KHSR5 | AFV121KHSR5 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | Ceramic Flangeless | NI-1230-4S | CFM4F | NI-1230-4S |
