The 1012GN-800V is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for 20us, 6% duty cycle radar systems. It is capable of providing over 19dB gain, 800 Watts of pulsed RF output power using 20us, 6% pulse format at 1025-1150MHz. The transistor has internal pre-match for optimal performance. This transistor is specifically designed for Avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 1012GN-800V |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
