Microchip Technology, Inc. RF Power Transistor 1214GN-700V

Description
The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width, and 10% duty factor across the 960 MHz to 1215 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for the output stage of L-Band pulsed primary radar systems. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness.
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Description
The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width, and 10% duty factor across the 960 MHz to 1215 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for the output stage of L-Band pulsed primary radar systems. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness.
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Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
1214GN-700V
RF Power Transistor 1214GN-700V
The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width, and 10% duty factor across the 960 MHz to 1215 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for the output stage of L-Band pulsed primary radar systems. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness.

The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width, and 10% duty factor across the 960 MHz to 1215 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for the output stage of L-Band pulsed primary radar systems. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness.

Supplier's Site Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
1214GN-700V
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 1214GN-700V
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Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Transistors RF Transistors
Product Number 1214GN-700V 1214GN-700V
Product Name RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material GaN
Package Type Ceramic Flanged Surface Mount
Power Gain 16.5 dB
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