The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power with over 18.6 dB gain and greater than 70% drain efficiency at both 32us pulse width, 2% duty cycle, Mode-S ELM, and IFF pulse formats. The transistor is internally pre-matched for optimal performance and utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Best Size, Weight, and Power (SWaP) output stage designs can be achieved by taking advantage of the small footprint single-ended industry standard Gemini packaged device with single gate and drain bias feeds.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 1011GN-1600VG |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
