NXP Semiconductors 13.6V MOSFET Transistor AFT05MS031GNR1

Description
RF MOSFET LDMOS 13.6V TO270-2 Product overview: AFT05MS031GNR1 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 13.6V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 13.6V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-AFT05MS031GNR1 can be used for catalog matching and distributor lookup.
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Description
RF MOSFET LDMOS 13.6V TO270-2 Product overview: AFT05MS031GNR1 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 13.6V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 13.6V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-AFT05MS031GNR1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
13.6V MOSFET Transistor
285-AFT05MS031GNR1
13.6V MOSFET Transistor 285-AFT05MS031GNR1
RF MOSFET LDMOS 13.6V TO270-2 Product overview: AFT05MS031GNR1 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 13.6V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 13.6V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-AFT05MS031GNR1 can be used for catalog matching and distributor lookup.

RF MOSFET LDMOS 13.6V TO270-2 Product overview: AFT05MS031GNR1 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 13.6V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 13.6V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-AFT05MS031GNR1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
RF Power Transistor - AFT05MS031GNR1 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
AFT05MS031GNR1
RF Power Transistor AFT05MS031GNR1
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio

Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio

Supplier's Site Datasheet
 - AFT05MS031GNR1 - Rochester Electronics
Newburyport, MA, United States
Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V

Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1229911-AFT05MS031GNR1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1229911-AFT05MS031GNR1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1229911-AFT05MS031GNR1
Win Source Part Number: 1229911-AFT05MS031GN R1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Tape & Reel (TR) Standard Package: 500 Voltage - Rated: 40 V Frequency: 520MHz Current - Test: 10 mA Gain: 17.7dB Transistor Type: LDMOS Voltage - Test: 13.6 V Power - Output: 31W Package / Case: TO-270BA Supplier Device Package: TO-270-2 GULL ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: NXP USA Inc. Other Names: 935321855528 Base Product Number: AFT05

Win Source Part Number: 1229911-AFT05MS031GNR1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Package: Tape & Reel (TR)
Standard Package: 500
Voltage - Rated: 40 V
Frequency: 520MHz
Current - Test: 10 mA
Gain: 17.7dB
Transistor Type: LDMOS
Voltage - Test: 13.6 V
Power - Output: 31W
Package / Case: TO-270BA
Supplier Device Package: TO-270-2 GULL
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: NXP USA Inc.
Other Names: 935321855528
Base Product Number: AFT05

Buy Now Datasheet
RF FETs, MOSFETs - 568-AFT05MS031GNR1TR-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-AFT05MS031GNR1TR-ND
RF FETs, MOSFETs 568-AFT05MS031GNR1TR-ND
RF Mosfet LDMOS 13.6V 10mA 520MHz 17.7dB 31W TO-270-2 GULL

RF Mosfet LDMOS 13.6V 10mA 520MHz 17.7dB 31W TO-270-2 GULL

Buy Now Datasheet
RF FETs, MOSFETs - 568-AFT05MS031GNR1DKR-ND - DigiKey
Thief River Falls, MN, United States
RF MOSFET LDMOS 13.6V TO270-2

RF MOSFET LDMOS 13.6V TO270-2

Buy Now Datasheet
RF FETs, MOSFETs - 568-AFT05MS031GNR1CT-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-AFT05MS031GNR1CT-ND
RF FETs, MOSFETs 568-AFT05MS031GNR1CT-ND
RF MOSFET LDMOS 13.6V TO270-2

RF MOSFET LDMOS 13.6V TO270-2

Buy Now Datasheet
RF FETs, MOSFETs - AFT05MS031GNR1 - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
AFT05MS031GNR1
RF FETs, MOSFETs AFT05MS031GNR1
FET RF 40V 520MHZ TO270-2G

FET RF 40V 520MHZ TO270-2G

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF MOSFET Transistors
AFT05MS031GNR1
RF MOSFET Transistors AFT05MS031GNR1
RF MOSFET Transistors MV9 UHF 13.6V

RF MOSFET Transistors MV9 UHF 13.6V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AFT05MS031GNR1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AFT05MS031GNR1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AFT05MS031GNR1
RF MOSFET LDMOS 13.6V TO270-2

RF MOSFET LDMOS 13.6V TO270-2

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Richardson RFPD Rochester Electronics Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET RF MOSFET Transistors Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 285-AFT05MS031GNR1 AFT05MS031GNR1 AFT05MS031GNR1 1229911-AFT05MS031GNR1 568-AFT05MS031GNR1TR-ND AFT05MS031GNR1 AFT05MS031GNR1 AFT05MS031GNR1
Product Name 13.6V MOSFET Transistor RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF RF FETs, MOSFETs RF FETs, MOSFETs RF MOSFET Transistors Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
Transconductance 0.0058 kS
PD 294 milliwatts
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