The 1011GN-125E is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed RF output power under several pulse formats, including mode-S ELM, across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. The hermetically sealed transistor is available in both the bolt-down flange 55-QQ package and the earless solder-down flange 55-QQP package styles, as well as mounted on a compact 50 Ohm IN/OUT pallet. Designed specifically for IFF, Mode-S, TCAS, and avionics secondary radar applications, the transistor devices utilize all-gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 1011GN-125E |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
