The 2731GN-120V is a hermetically sealed, common-source GaN on SiC HEMT transistor designed for S-band pulsed radar applications, delivering 120 W pulsed RF output power at 2700-3100 MHz with 16.5 dB gain and 64% drain efficiency under 200 μs pulse width and 10% duty cycle. It operates with a 50 V drain supply and has a maximum drain-source voltage of 125 V. The device is housed in a 55-QP package and has a thermal resistance of 1.13 °C/W. It meets reliability standards through all-gold metallization and is rated for an operating junction temperature up to +250 °C and storage temperatures from -55 °C to +125 °C.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 2731GN-120V |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
