The 2729GN-250V is a GaN on SiC HEMT transistor designed for S-band pulsed radar applications, delivering 250 W pulsed RF output power at 2700 to 2900 MHz with 200 µs pulse width and 10% duty cycle. It features an internal match and common-source configuration with 14.1 to 15 dB gain and 55 to 60% drain efficiency. It operates with a +50 V drain supply and 75 mA quiescent current. The device is housed in a 55-QP package measuring 5.41 to 5.51 mm by 20.26 to 20.37 mm by 14.22 to 14.32 mm. The junction temperature operates up to +250 °C, with a thermal resistance of 0.45 °C/W under pulsed conditions. All gold metallization enhances reliability.
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 2729GN-250V |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
