The 0912GN-250V is a GaN on SiC HEMT transistor designed for broadband avionics data link applications, delivering 250 W pulsed RF output power at 960 to 1215 MHz with 18.5 dB gain, 128 μs pulse width, and 10% duty factor. It features internal pre-match for optimal performance and uses gold metallization and eutectic attach for reliability. The device operates with a 50 V drain supply and has a thermal resistance of 0.23 °C/W under pulse conditions. It is housed in a package with dimensions between 275 to 285 mil in width and 92 to 112 mil in height, constructed with CPC141 carrier and Ni/Au plating.
The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128 us pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal pre-match for optimal performance. This transistor can be used for broadband avionics data link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 0912GN-250V |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
