NXP Semiconductors RF FETs, MOSFETs A3G26D055NT4

Description
RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)
Request a Quote Datasheet
Description
RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - 568-A3G26D055NT4DKR-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-A3G26D055NT4DKR-ND
RF FETs, MOSFETs 568-A3G26D055NT4DKR-ND
RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)

RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)

Buy Now Datasheet
RF FETs, MOSFETs - 568-A3G26D055NT4CT-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-A3G26D055NT4CT-ND
RF FETs, MOSFETs 568-A3G26D055NT4CT-ND
RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)

RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)

Buy Now Datasheet
RF FETs, MOSFETs - 568-A3G26D055NT4TR-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
568-A3G26D055NT4TR-ND
RF FETs, MOSFETs 568-A3G26D055NT4TR-ND
RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)

RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)

Buy Now Datasheet
Downers Grove, IL, United States
RF Power Transistor
A3G26D055NT4
RF Power Transistor A3G26D055NT4
This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band, including RF Energy and tactical communications.

This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band, including RF Energy and tactical communications.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - A3G26D055NT4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
A3G26D055NT4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs A3G26D055NT4
RF MOSFET GAN 48V 6DFN

RF MOSFET GAN 48V 6DFN

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors RF Transistors
Product Number 568-A3G26D055NT4DKR-ND A3G26D055NT4 A3G26D055NT4
Product Name RF FETs, MOSFETs RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-LDFN Exposed Pad Plastic SMT 6-PDFN (7x6.5)
Transistor Technology / Material GaN
Power Gain 18 dB
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