This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band, including RF Energy and tactical communications.
RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)
RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)
RF Mosfet GaN 48V 40mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7x6.5)
RF MOSFET GAN 48V 6DFN
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | A3G26D055NT4 | 568-A3G26D055NT4DKR-ND | A3G26D055NT4 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Plastic SMT | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) |
| Power Gain | 18 dB |
