The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at 32us, 2% duty cycle pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
RF MOSFET HEMT 50V 55-Q03
| Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | 1011GN-1200V | 1011GN-1200V |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Ceramic Flanged | Surface Mount |
| Power Gain | 18.5 dB |
