This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz. This part is characterized and performance is guaranteed for applications operating in the 3300 to 3700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
RF MOSFET GAN 48V 6DFN
Airfast RF Power GaN Transistor, 3300 3700 MHz, 15.1 W Avg., 48 V / REEL RoHS Compliant: Yes
| Richardson RFPD | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | RF Transistors | RF Transistors | Transistors |
| Product Number | A5G35H110NT4 | A5G35H110NT4 | 26AK1567 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Airfast Rf Power Gan Transistor, 3300 3700 Mhz, 15.1 W Avg., 48 V / Reel Rohs Compliant Nxp |
| Transistor Technology / Material | GaN | ||
| Package Type | Plastic SMT | Surface Mount | TO-3 |
| Power Gain | 15.8 dB | ||
| Output Power | 15.1 watts |
