Microchip Technology, Inc. RF Power Transistor VRF148MP

Description
RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation di
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Description
RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation di
Request a Quote
Datasheet
Datasheet Summary
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The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain, with 30W output at 175MHz and 20dB typical gain at 30MHz. It operates with a 50V drain supply and features a 170V drain-source breakdown voltage, 6A continuous drain current, and 115W total power dissipation. Device thermal resistance is 1.52°C/W, and the junction temperature rating is 200°C. The part is packaged in an M113 case measuring 25.14mm x 9.90mm x 20.57mm, with four pins and an exposed drain tab. It includes nitride passivation, refractory gold metallization, and is RoHS compliant. The VRF148AMP variant denotes a matched pair with gate threshold voltage specified to within ±0.075V between devices.

Datasheet Summary
Powered by GS/AI

The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain, with 30W output at 175MHz and 20dB typical gain at 30MHz. It operates with a 50V drain supply and features a 170V drain-source breakdown voltage, 6A continuous drain current, and 115W total power dissipation. Device thermal resistance is 1.52°C/W, and the junction temperature rating is 200°C. The part is packaged in an M113 case measuring 25.14mm x 9.90mm x 20.57mm, with four pins and an exposed drain tab. It includes nitride passivation, refractory gold metallization, and is RoHS compliant. The VRF148AMP variant denotes a matched pair with gate threshold voltage specified to within ±0.075V between devices.

Suppliers

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Product
Description
Supplier Links
RF Power Transistor - VRF148MP - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
VRF148MP
RF Power Transistor VRF148MP
RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation di

RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation di

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number VRF148MP
Product Name RF Power Transistor
Output Power 30 watts
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