Microchip Technology, Inc. RF Power Transistor 1214GN-600VHE

Description
The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300us pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
  • RF Power Transistor - 1214GN-600VHE - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 1214GN-600VHE - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300us pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
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Suppliers

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Product
Description
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RF Power Transistor - 1214GN-600VHE - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
1214GN-600VHE
RF Power Transistor 1214GN-600VHE
The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300us pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300us pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 1214GN-600VHE - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
1214GN-600VHE
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 1214GN-600VHE
RF MOSFET HEMT 50V 55-KR

RF MOSFET HEMT 50V 55-KR

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Transistors RF Transistors
Product Number 1214GN-600VHE 1214GN-600VHE
Product Name RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material GaN
Package Type Ceramic Flanged Surface Mount
Power Gain 17.5 dB
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