The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses all gold transistor metallization to provide highest reliability and superior ruggedness.
RF MOSFET HEMT 50V 55-QP
| Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | 2729GN-300V | 2729GN-300V |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Ceramic Flanged | 55-QP |
| Power Gain | 15.3 dB |
