Richardson RFPD Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| RF Power Transistor -- CHZ015A-QEG/20 | 15W L-Band Driver. GaN HEMT on Sic in SMD leadless package. The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a... |
| RF Power Transistor -- CHZ180A-SEB/26 | 180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions... |
| RF Power Transistor -- D2219UK | 2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications. |
| RF Power Transistor -- D1028UK | 300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters. |
| RF Power Transistor -- D1002UK | 40W, 16dB gain @ 175MHz. General purpose RF power MOSFET |
| RF Power Transistor -- CG2H80030D-GP4 | CG2H80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on Cree’s 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties compared to silicon or gallium arsenide, including... |
| RF Power Transistor -- CG2H80045D-GP4 | CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CG2H80060D-GP4 | CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CG2H80120D-GP4 | CG2H80120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGH09120F | CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA... |
| RF Power Transistor -- CGH21120F | CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz... |
| RF Power Transistor -- CGH21240F | CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA... |
| RF Power Transistor -- CGH25120F | CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,... |
| RF Power Transistor -- CGH27015F | CGH27015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015F ideal for VHF, Comms, 3G,... |
| RF Power Transistor -- CGH27015P | CGH27015P is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,... |
| RF Power Transistor -- CGH27030F | CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for VHF, Comms,... |
| RF Power Transistor -- CGH27030P | CGH27030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030P ideal for VHF, Comms,... |
| RF Power Transistor -- CGH27030S | CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,... |
| RF Power Transistor -- CGH27060F | CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms,... |
| RF Power Transistor -- CGH31240F | CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band... |
| RF Power Transistor -- CGH35015F | CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which... |
| RF Power Transistor -- CGH35030F | CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-3.9GHz WiMAX... |
| RF Power Transistor -- CGH35060F2 | CGH35060F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 ideal for 3.1-3.5 GHz... |
| RF Power Transistor -- CGH35060P2 | CGH35060P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060P2 ideal for 3.1-3.5 GHz... |
| RF Power Transistor -- CGH35240F | CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band... |
| RF Power Transistor -- CGH40006P | CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40006S | CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40010F | CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40010P | CGH40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40025F | CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40025P | CGH40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40035F | CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40045F | CGH40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40090PP | CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40120F | CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40120P | CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGH40180PP | CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of... |
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RF Power Transistor -- CGH55015F2
RF Power Transistor -- CGH55030F2 |
CGH55015F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed... |
| RF Power Transistor -- CGH55015P2 | CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015P2 ideal for C-band pulsed... |
| RF Power Transistor -- CGH55030P2 | CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030P2 ideal for C-band pulsed... |
| RF Power Transistor -- CGH60008D-GP4 | CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGH60015D-GP4 | CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGH60030D-GP4 | CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGH60060D-GP4 | CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGH60120D-GP4 | CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGHV14250F | CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 -... |
| RF Power Transistor -- CGHV14250P | CGHV14250P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250P ideal for 1.2 -... |
| RF Power Transistor -- CGHV14500F | CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 -... |
| RF Power Transistor -- CGHV14500P | CGHV14500P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500P ideal for 1.2 -... |
| RF Power Transistor -- CGHV14800F | CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800F ideal for 1.2 -... |
| RF Power Transistor -- CGHV1F006S | CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... |
| RF Power Transistor -- CGHV1F025S | CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... |
| RF Power Transistor -- CGHV1J006D-GP4 | CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers... |
| RF Power Transistor -- CGHV1J025D-GP4 | CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers... |
| RF Power Transistor -- CGHV1J070D-GP4 | CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers... |
| RF Power Transistor -- CGHV27015S | CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,... |
| RF Power Transistor -- CGHV27060MP | CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no... |
| RF Power Transistor -- CGHV31500F | CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 -... |
| RF Power Transistor -- CGHV35060MP | CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz... |
| RF Power Transistor -- CGHV35150F | CGHV35150F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150F ideal for 2.9 -... |
| RF Power Transistor -- CGHV35150P | CGHV35150P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150P ideal for 2.9 -... |
| RF Power Transistor -- CGHV35400F | CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 -... |
| RF Power Transistor -- CGHV37400F | CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 -... |
| RF Power Transistor -- CGHV40030F | CGHV40030F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... |
| RF Power Transistor -- CGHV40030P | CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,... |
| RF Power Transistor -- CGHV40050F | CGHV40050F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGHV40050P | CGHV40050P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGHV40100P | CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGHV40100F | CGHV40100F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGHV40180F | CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGHV40180P | CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGHV40200PP | CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of... |
| RF Power Transistor -- CGHV40320D-GP4 | CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGHV50200F | CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications,... |
| RF Power Transistor -- CGHV59070F | CGHV59070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety... |
| RF Power Transistor -- CGHV59070P | CGHV59070P is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety... |
| RF Power Transistor -- CGHV59350F | CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2 -... |
| RF Power Transistor -- CGHV60040D-GP4 | CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGHV60075D5-GP4 | CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGHV60170D-GP4 | CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,... |
| RF Power Transistor -- CGHV96050F1 | CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to... |
| RF Power Transistor -- CGHV96050F2 | CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to... |
| RF Power Transistor -- CGHV96100F2 | CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to... |
| RF Power Transistor -- CGHV96130F | CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies. |
| RF Power Transistor -- CGHV35120F | Cree’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1... |
| RF Power Transistor -- MAGX000035-0100 | GaN Wideband 10W CW/Pulsed Transistor in Plastic Package DC-3.5 GHz. The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the wide RF frequency capability, reliable high voltage operation... |
| RF Power Transistor -- MAGX-011086 | GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high... |
| RF Power Transistor -- D1004UK | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED |
| RF Power Transistor -- D2216UK | Gold metallized multi-purpose silicon DMOS RF FET 15W 12.5V 500 MHz push-pull |
| RF Power Transistor -- GTVA107001EC-V1 | GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced... |
| RF Power Transistor -- GTVA126001EC-V1 | GTVA126001EC is a 600-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced... |
| RF Power Transistor -- DMD1028 | New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz |
| RF Power Transistor -- DRF1400 | RF MOSFET performance can be severely limited by the driver selection. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be... |
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RF Power Transistor -- LET9045S
RF Power Transistor -- LET9060S |
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs |
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RF Power Transistor -- CHK8015-99F
RF Power Transistor -- CHK9013-99F/00 RF Power Transistor -- CHK9014-99F/00 RF Power Transistor -- CHKA011-SXA RF Power Transistor -- CHZ8012-QJA RF Power Transistor -- CHZ9012-QFA RF Power Transistor -- D1001UK RF Power Transistor -- D1003UK RF Power Transistor -- D1005UK RF Power Transistor -- D1007UK RF Power Transistor -- D1008UK RF Power Transistor -- D1009UK RF Power Transistor -- D1010UK RF Power Transistor -- D1011UK RF Power Transistor -- D1011UKT/R RF Power Transistor -- D1012UK RF Power Transistor -- D1013UK RF Power Transistor -- D1014UK RF Power Transistor -- D1016UK RF Power Transistor -- D1017UK RF Power Transistor -- D1018UK RF Power Transistor -- D1020UK RF Power Transistor -- D1021UK RF Power Transistor -- D1022UK RF Power Transistor -- D1023UK RF Power Transistor -- D1025UK RF Power Transistor -- D1029UK RF Power Transistor -- D1030UK RF Power Transistor -- D1034UK RF Power Transistor -- D1040UK RF Power Transistor -- D1053UK RF Power Transistor -- D1094UK RF Power Transistor -- D1203UK RF Power Transistor -- D2001UK RF Power Transistor -- D2002UK RF Power Transistor -- D2003UK RF Power Transistor -- D2004UK RF Power Transistor -- D2005UK RF Power Transistor -- D2006UK RF Power Transistor -- D2007UK RF Power Transistor -- D2008UK RF Power Transistor -- D2009UK RF Power Transistor -- D2012UK RF Power Transistor -- D2013UK RF Power Transistor -- D2014UK RF Power Transistor -- D2015UK RF Power Transistor -- D2019UK RF Power Transistor -- D2020UK RF Power Transistor -- D2021UK RF Power Transistor -- D2081UK.FT/R RF Power Transistor -- D2089UK RF Power Transistor -- D2201UK RF Power Transistor -- D2202UK RF Power Transistor -- D2203UK RF Power Transistor -- D2205UK RF Power Transistor -- D2207UK RF Power Transistor -- D2208UK RF Power Transistor -- D2210UK RF Power Transistor -- D2211UK RF Power Transistor -- D2212UK RF Power Transistor -- D2213UK RF Power Transistor -- D2214UK RF Power Transistor -- D2219UKT/R RF Power Transistor -- D2220UK RF Power Transistor -- D2221UK RF Power Transistor -- D2224UK RF Power Transistor -- D2225UK RF Power Transistor -- D2229UK RF Power Transistor -- D2229UKT/R RF Power Transistor -- D2230UK RF Power Transistor -- D2241UK RF Power Transistor -- D2254UK RF Power Transistor -- D2282UK.F RF Power Transistor -- D2290UK RF Power Transistor -- D2294UK RF Power Transistor -- D5001UK RF Power Transistor -- D5002UK RF Power Transistor -- D5006UK RF Power Transistor -- D5011UK RF Power Transistor -- D5017UK RF Power Transistor -- D5030UK RF Power Transistor -- D8605SM RF Power Transistor -- DMD1020 RF Power Transistor -- DRF1211 RF Power Transistor -- DRF1410 RF Power Transistor -- DRF1510 RF Power Transistor -- DU1215S RF Power Transistor -- DU2805S RF Power Transistor -- DU2810S RF Power Transistor -- DU28120T RF Power Transistor -- DU28120V RF Power Transistor -- DU28200M RF Power Transistor -- DU2820S RF Power Transistor -- DU2840S RF Power Transistor -- DU2860T RF Power Transistor -- DU2860U RF Power Transistor -- DU2880T RF Power Transistor -- DU2880U RF Power Transistor -- DU2880V RF Power Transistor -- FH2164 RF Power Transistor -- GTRA214602FC-V1 RF Power Transistor -- GTVA107001FCV1R RF Power Transistor -- HVV1011-035 RF Power Transistor -- LET9045STR RF Power Transistor -- LET9045TR RF Power Transistor -- LF2805A RF Power Transistor -- LF2810A RF Power Transistor -- MAPH-000066-FL0 RF Power Transistor -- MAPHST0045 RF Power Transistor -- MAPHST0049 RF Power Transistor -- MAPR-002729-170 |
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... |
| RF Power Transistor -- CGHV27030S | The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal... |
| RF Power Transistor -- CHK080A-SRA | The CHK080A-SRA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... |
| RF Power Transistor -- CHK8013-99F/00 | The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar... |
| RF Power Transistor -- CHKA011A-SXA | The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited... |
| RF Power Transistor -- CHZ015AA-QEG/20 | The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well... |
| RF Power Transistor -- DC35GN-15-Q4 | The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN... |
| RF Power Transistor -- DRF1200 | The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system... |
| RF Power Transistor -- DRF1201 | The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system... |
| RF Power Transistor -- DRF1203 | The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system... |
| RF Power Transistor -- DRF1300 | The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered... |
| RF Power Transistor -- DRF1301 | The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered... |
| RF Power Transistor -- GTRA262802FC-V2 | The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency,... |
| RF Power Transistor -- GTRA263902FC-V2 | The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... |
| RF Power Transistor -- GTRA362002FC-V1 | The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and... |
| RF Power Transistor -- GTRA362802FC-V1 | The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and... |
| RF Power Transistor -- GTRA364002FC-V1 | The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and... |
| RF Power Transistor -- GTRA374902FC-V1 | The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... |
| RF Power Transistor -- GTRA384802FC-V1 | The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency,... |
| RF Power Transistor -- GTVA101K42EV-V1 | The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package... |
| RF Power Transistor -- GTVA104001FA-V1 | The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and... |
| RF Power Transistor -- GTVA123501FA-V1 | The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and... |
| RF Power Transistor -- GTVA212701FA-V2 | The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching, high efficiency, and... |
| RF Power Transistor -- GTVA220701FA-V1 | The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... |
| RF Power Transistor -- GTVA261701FA-V1 | The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... |
| RF Power Transistor -- GTVA261802FC-V1 | The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package... |
| RF Power Transistor -- GTVA262701FA-V2 | The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced... |
| RF Power Transistor -- GTVA262711FA-V2 | The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... |
| RF Power Transistor -- GTVA263202FC-V1 | The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a... |
| RF Power Transistor -- GTVA311801FA-V1 | The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching, high efficiency, and... |
| RF Power Transistor -- GTVA355001EC-V1 | The GTVA355001EC is a 500-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2900 to 3500 MHz frequency band. It features input and output matching, high... |
| RF Power Transistor -- LET16045C | The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed... |
| RF Power Transistor -- LET20030C | The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. The LET20030C is designed... |
| RF Power Transistor -- LET9045C | The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed... |
| RF Power Transistor -- LET9045F | The LET9045F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045F is designed... |
| RF Power Transistor -- LET9120 | The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor. The LET9120 is designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. |
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RF Power Transistor -- MAGX-100027-015
RF Power Transistor -- MAGX-100027015S |
The MAGX-100027-015S0P is a high power GaN on Silicon HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak... |
| RF Power Transistor -- MAGX-100027-050 | The MAGX-100027-050C0P is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak... |
| RF Power Transistor -- MAGX-100027050C | The MAGX-100027-050CTP is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak... |
| RF Power Transistor -- MAGX-100027-100 | The MAGX-100027-100C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 100 W... |
| RF Power Transistor -- MAGX-100027100C | The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power... |
| RF Power Transistor -- MAGX-100027-300 | The MAGX-100027-300C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 300 W... |
| RF Power Transistor -- MAGX-100027300C | The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power... |
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