Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

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Product Name	Notes
RF Power Transistor -- MAGE-102425-30CPPR	300 W MACOM GaN Power Transistor Based on MACOM’s Gen4 GaN technology, the new MAGe-102425-300 delivers performance that defies the inherent power efficiency and density limitations of LDMOS at an...
RF Power Transistor -- PH1090-175L RF Power Transistor -- PH1090-350L RF Power Transistor -- PH1090-550S	Avionics Power Transistors
RF Power Transistor -- NPT25100B RF Power Transistor -- NPT25100P	Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- NPT35015D RF Power Transistor -- NPTB00004D	Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- MRFE6S9060NR1	Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications...
RF Power Transistor -- MRF141 RF Power Transistor -- MRF141G RF Power Transistor -- MRF141MP RF Power Transistor -- MRF151 RF Power Transistor -- MRF151A RF Power Transistor -- MRF151G	Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM...
RF Power Transistor -- MRF173	Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device make possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF173CQ	Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF177	Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain...
RF Power Transistor -- MRF175GU RF Power Transistor -- MRF175GV RF Power Transistor -- MRF176GU RF Power Transistor -- MRF176GV	Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid...
RF Power Transistor -- MRF175LU	Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz frequency range. The high power, high gain and broadband performance of each device makes...
RF Power Transistor -- MRF275L	Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid...
RF Power Transistor -- MW6S004NT1	Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- MMRF1014NT1	Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- MRF148A RF Power Transistor -- MRF148AMP	Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
RF Power Transistor -- MRF158	Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
RF Power Transistor -- MRF136Y	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.
RF Power Transistor -- MRF136	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
RF Power Transistor -- MRF134	Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range.
RF Power Transistor -- MRF448A	Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
RF Power Transistor -- MRF154	Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
RF Power Transistor -- MRF157 RF Power Transistor -- MRF157MP	Designed primarily for linear large-signal output stages to 80 MHz.
RF Power Transistor -- MRF140 RF Power Transistor -- MRF140MP	Designed primarily for linear large-signal output stages up to 150 MHz frequency range.
RF Power Transistor -- MRF150 RF Power Transistor -- MRF150MP	Designed primarily for linear large-signal output stages up to150 MHz frequency range.
RF Power Transistor -- MRF160 RF Power Transistor -- MRF166C	Designed primarily for wideband large-signal output and driver from 30-500 MHz.
RF Power Transistor -- MRF275G	Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
RF Power Transistor -- MRF171A RF Power Transistor -- MRF171AMP	Designed primarily for wideband large-signal output and driver stages from 30-200 MHz
RF Power Transistor -- MRF166W	Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
RF Power Transistor -- MRF174	Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range.
RF Power Transistor -- NPT25015D	Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- NPT1012B	Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- NPT1004D	Gallium Nitride 28V, 45W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- MAGX-000035-01000P	GaN Wideband 10W CW/Pulsed Transistor in Plastic Package DC-3.5 GHz. The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the wide RF frequency capability, reliable high voltage operation...
RF Power Transistor -- MAGX-011086	GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high...
RF Power Transistor -- MMRF1305HSR5	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military...
RF Power Transistor -- MMRF1306HR5	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and...
RF Power Transistor -- MRFE6VP61K25HR5	High Ruggedness N-Channel. Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land...
RF Power Transistor -- MRF455	In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE...
RF Power Transistor -- IGN1011L1200	L-BAND-1200W -TRANSISTOR
RF Power Transistor -- IGNP0912M2400	L-BAND-AVIONICS-2400 W PALLET
RF Power Transistor -- IGN1011S3600 RF Power Transistor -- IGN1030S3600	L-BAND-AVIONICS-3600 W-TRANSISTOR
RF Power Transistor -- IGNP0912S5000 RF Power Transistor -- IGNP1030S5000	L-BAND-AVIONICS-5000 W PALLET
RF Power Transistor -- IGN1030S5000	L-BAND-AVIONICS-5000 W TRANSISTOR
RF Power Transistor -- IGT1011S500	L-BAND-AVIONICS-500W TRANSISTOR
RF Power Transistor -- IGNP1300S3600	L-BAND-ISM-3600W-PAL LET
RF Power Transistor -- IGN1300S3600	L-BAND-ISM-3600W-TRA NSISTOR
RF Power Transistor -- IGNP1214M3200	L-BAND-RADAR-3200W-P ALLET
RF Power Transistor -- IGN1214M3200	L-BAND-RADAR-3200W-T RANSISTOR
RF Power Transistor -- MMRF1312GSR5	MMRF1312GSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HR5	MMRF1312HR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HSR5	MMRF1312HSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MRFE6VP6300HSR5	N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and...
RF Power Transistor -- MMRF1020-04GNR3	N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The...
RF Power Transistor -- MMRF1004GNR1	N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier...
RF Power Transistor -- MMRF1007HSR5 RF Power Transistor -- MMRF1008HR5	N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications,...
RF Power Transistor -- PH1214-110M RF Power Transistor -- PH1214-12M RF Power Transistor -- PH1214-220M RF Power Transistor -- PH1214-25M RF Power Transistor -- PH1214-2M RF Power Transistor -- PH1214-55EL RF Power Transistor -- PH1214-6M RF Power Transistor -- PH1214-80M RF Power Transistor -- PH2226-110M RF Power Transistor -- PH2226-50M RF Power Transistor -- PH2729-110M RF Power Transistor -- PH2729-25M RF Power Transistor -- PH2729-65M RF Power Transistor -- PH2729-8.5M RF Power Transistor -- PH2731-20M RF Power Transistor -- PH2731-5M RF Power Transistor -- PH2731-75L RF Power Transistor -- PH3134-10M RF Power Transistor -- PH3135-20M RF Power Transistor -- PH3135-25S RF Power Transistor -- PH3135-5M RF Power Transistor -- PH3135-65M RF Power Transistor -- PH3135-90S	Radar Power Transistors
RF Power Transistor -- MRF6V10010NR4	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device...
RF Power Transistor -- MRF6S24140HR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed primarily for large - signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific...
RF Power Transistor -- MRF6V14300HR5 RF Power Transistor -- MRF6V14300HSR5	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices...
RF Power Transistor -- MRFE6VP61K25HSR6	RF Power Field Effect Transistors. High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog...
RF Power Transistor -- MRF6V12500HR5 RF Power Transistor -- MRF6V12500HSR5	RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in...
RF Power Transistor -- MRFE6VS25LR5 RF Power Transistor -- MRFE6VS25NR1	RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness...
RF Power Transistor -- MRF6V12250HR5 RF Power Transistor -- MRF6V12250HSR5 RF Power Transistor -- MRF6VP121KHR5	RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
RF Power Transistor -- VRF141MP	RF Power Vertical MOSFET. The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF148MP	RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF150MP	RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF151MP	RF Power Vertical MOSFET. The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF152MP	RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF152	RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness.
RF Power Transistor -- VRF154FLMP	RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF157FLMP	RF Power Vertical MOSFET. The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF161	RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF161MP	RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF2933MP	RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- IGN1011M15 RF Power Transistor -- IGN1011S350 RF Power Transistor -- IGN1214M1600 RF Power Transistor -- IGN1214M500R2 RF Power Transistor -- IGN2425S1500 RF Power Transistor -- IGN2729M1700 RF Power Transistor -- LF2805A RF Power Transistor -- MAGB-101836-025B0P RF Power Transistor -- MAGB-103338-050S0P RF Power Transistor -- MAGX-011086A RF Power Transistor -- MAGX-101011-700E00 RF Power Transistor -- MAGX-101050-002C0P RF Power Transistor -- MAPC-A1002-AD000 RF Power Transistor -- MAPC-A1101-AS000 RF Power Transistor -- MAPC-A1101-ASTR1 RF Power Transistor -- MAPC-A1102-AB00 RF Power Transistor -- MAPC-A1102-AS000 RF Power Transistor -- MAPC-A1109-AQ000 RF Power Transistor -- MAPC-A1110-AP000 RF Power Transistor -- MAPC-A1500-AS000 RF Power Transistor -- MAPC-A1501-AS000 RF Power Transistor -- MAPC-A1521-AS000 RF Power Transistor -- MAPC-A1522-AS000 RF Power Transistor -- MAPC-A1525-AS000 RF Power Transistor -- MAPC-A1533-AQ000 RF Power Transistor -- MAPC-A1534-AS000 RF Power Transistor -- MAPC-A1558-AB000 RF Power Transistor -- MAPC-A1559-AS000 RF Power Transistor -- MAPC-A2004-BDTR1 RF Power Transistor -- MAPC-A2517-AS000 RF Power Transistor -- MAPC-A3001-AB000 RF Power Transistor -- MAPC-A3002-AP000 RF Power Transistor -- MAPC-A3005-ADTR1 RF Power Transistor -- MAPC-A3005-AS000 RF Power Transistor -- MAPC-A3006-AS000 RF Power Transistor -- MAPC-A3007-ADTR1 RF Power Transistor -- MAPC-A3008-AB000 RF Power Transistor -- MAPC-A3010-AB000 RF Power Transistor -- MAPC-A3014-AD000 RF Power Transistor -- MAPC-A3014-ADTR1 RF Power Transistor -- MAPC-A3025-AD000 RF Power Transistor -- MAPC-A3029-AB000 RF Power Transistor -- MAPC-A3030-AB000 RF Power Transistor -- MAPC-A3033-AP000 RF Power Transistor -- MAPC-A4015-AS000 RF Power Transistor -- MAPC-A4024-AB000 RF Power Transistor -- MAPC-A4027-AB000 RF Power Transistor -- MAPC-A4029-AB000 RF Power Transistor -- MAPC-A4031-AB000 RF Power Transistor -- MAPC-A4032-AB000 RF Power Transistor -- MAPC-C18640-DP000 RF Power Transistor -- MAPC-C20130-CD000 RF Power Transistor -- MAPC-C22440-BS000 RF Power Transistor -- MAPC-C40450-CP000 RF Power Transistor -- MAPC-C50060-AD000 RF Power Transistor -- MAPHST0045 RF Power Transistor -- MAPL-000817-012CPC RF Power Transistor -- MAPR-000912-500S00 RF Power Transistor -- MAPR-002729-170M00 RF Power Transistor -- MAPRST0912-350 RF Power Transistor -- MAPRST0912-50 RF Power Transistor -- MAPRST1030-1KS RF Power Transistor -- MATR-001214-XL4200 RF Power Transistor -- MATR-002735-637100 RF Power Transistor -- MPAL3035M15 RF Power Transistor -- MRF10005 RF Power Transistor -- MRF1000MB RF Power Transistor -- MRF10031 RF Power Transistor -- MRF1004MB RF Power Transistor -- MRF10120 RF Power Transistor -- MRF10150 RF Power Transistor -- MRF10350 RF Power Transistor -- MRF10502 RF Power Transistor -- MRF1090MB RF Power Transistor -- MRF1150MB RF Power Transistor -- MRF16006 RF Power Transistor -- MRF313 RF Power Transistor -- MRF314 RF Power Transistor -- MRF316 RF Power Transistor -- MRF317 RF Power Transistor -- MRF321 RF Power Transistor -- MRF323 RF Power Transistor -- MRF327 RF Power Transistor -- MRF392 RF Power Transistor -- MRF393 RF Power Transistor -- MRF421 RF Power Transistor -- MRF422 RF Power Transistor -- MRF422MP RF Power Transistor -- MRF426 RF Power Transistor -- MRF429 RF Power Transistor -- MRF448 RF Power Transistor -- MRF454 RF Power Transistor -- MRF455MP RF Power Transistor -- MRF8VP13350NR5 RF Power Transistor -- MRFE6VP6300GSR5 RF Power Transistor -- MRFX1K80GNR5 RF Power Transistor -- MS1227D RF Power Transistor -- MS2248 RF Power Transistor -- MS2279 RF Power Transistor -- NPA1006A-TR0500 RF Power Transistor -- PH1090-700B RF Power Transistor -- PH1090-75L RF Power Transistor -- PH1214-100EL RF Power Transistor -- PH1214-300M RF Power Transistor -- PH1214-40M RF Power Transistor -- PH2729-130M RF Power Transistor -- PH9051 RF Power Transistor -- PMRF5301HSES RF Power Transistor -- PTRA084858NF-V1-R5 RF Power Transistor -- PTRA087008NB-V1-R2 RF Power Transistor -- PTRA094858NF-V1-R5 RF Power Transistor -- PTVA030121EA-V1-R250 RF Power Transistor -- PTVA047002EV-V1-R250 RF Power Transistor -- PTVA101K02EV-V1-R250 RF Power Transistor -- PTVA102001EA-V1-R2 RF Power Transistor -- PTVA104501EH-V1-R250 RF Power Transistor -- PTVA120251EA-V2-R250 RF Power Transistor -- PTVA120501EA-V1-R250 RF Power Transistor -- PTVA123501EC-V2-R250 RF Power Transistor -- PTVA123501FC-V1-R250 RF Power Transistor -- PXAE183708NB-V1-R2 RF Power Transistor -- PXAE261908NF-V1-R5 RF Power Transistor -- SD1407-NOLOGO RF Power Transistor -- SRF4116 RF Power Transistor -- UF2805B RF Power Transistor -- UF28100M RF Power Transistor -- UF28100V RF Power Transistor -- UF2810P RF Power Transistor -- UF28150J RF Power Transistor -- UF2815B RF Power Transistor -- UF2820P RF Power Transistor -- UF2840G RF Power Transistor -- UF2840P RF Power Transistor -- VRF141 RF Power Transistor -- VRF141G RF Power Transistor -- VRF151MQ RF Power Transistor -- VRF2944MP RF Power Transistor -- WSA4501S	Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- IGN2631M1400	S-BAND-DIRECTED-ENER GY-1500W TRANSISTOR
RF Power Transistor -- IGN2731L10	S-BAND-RADAR-10W TRANSISTOR
RF Power Transistor -- IGN3000S2700	S-BAND-SCIENTIFIC-27 00W TRANSISTOR
RF Power Transistor -- MAGB-103340-015B0P	The MAGB-103340-015B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.3 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
RF Power Transistor -- MAGB-103740-008B0P	The MAGB-103740-008B0P is a wideband GaNHEMT D-mode amplifier designed for base stationapplications and optimized for 3.7 - 4.0 GHzmodulated signal operation. This device supportspulsed and linear operation with peak output...
RF Power Transistor -- MAGX-100027-002S0P	The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-002STP	The MAGX-100027-002S0P is a GaN on Si HEMTD-mode transistor suitable for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsto 2 W...
RF Power Transistor -- MAGX-100027-015STP	The MAGX-100027-015S0P is a high power GaN on Silicon HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027-050C0P	The MAGX-100027-050C0P is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027-050CTP	The MAGX-100027-050CTP is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027-100C0P	The MAGX-100027-100C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 100 W...
RF Power Transistor -- MAGX-100027-100CTP	The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-300C0P	The MAGX-100027-300C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 300 W...
RF Power Transistor -- MAGX-100027-300CTP	The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAPC-A1000-AD000 RF Power Transistor -- MAPC-A1000-ADTR1	The MAPC-A1000 is a GaN on Silicon CarbideHEMT D-mode amplifier suitable for 30 - 3000 MHzfrequency operation. The device supports both CWand pulsed operation with minimum output powerlevels of 25...
RF Power Transistor -- MAPC-A1100-AS000	The MAPC-A1100 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable forDC - 3.5 GHz frequency operation. The devicesupports both CW and pulsed operation with outputpower levels of...
RF Power Transistor -- MAPC-A1103-ASTR1	The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with...
RF Power Transistor -- MAPC-A1103-AS000	The MAPC-A1103 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable forDC - 2.7 GHz frequency operation. The devicesupports both CW and pulsed operation with outputpower levels of...
RF Power Transistor -- MAPC-A1500-AB000 RF Power Transistor -- MAPC-A1500-ABTR1	The MAPC-A1500 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable for960 - 1215 MHz frequency operation. The devicesupports pulsed operation with output power levelsof 2600 W (64.1...
RF Power Transistor -- MAPC-A1511-AS000	The MAPC-A1511 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for 3 - 700 MHz frequency operation. The device supports both pulsed and CW operation with minimum output...
RF Power Transistor -- MAPC-A4004-AB000	The MAPC-A4004 is a 150 W packaged amplifier fully matched to 50 Ohm at both input and output ports. Utilizing the high performance, 50 V GaN on SiC production process,...
RF Power Transistor -- MAPC-A4017-AB000	The MAPC-A4017 is a 130 W package amplifier fully matched to 50 Ohm at both input and output ports. This amplifier is optimized for 5.85 - 6.75 GHz Satcom applications.
RF Power Transistor -- MAPC-A4019-AB000	The MAPC-A4019 is a 60 W package amplifier fully matched to 50 Ohm at both input and output ports. This amplifier is optimized for 5.85 - 6.75 GHz Satcom applications.
RF Power Transistor -- MAPC-A4020-AB000	The MAPC-A4020 is a 60 W packaged amplifier fully matched to 50 Ohm at both input and output ports. This amplifier is optimized for 7.7 - 8.5 GHz Satcom applications.
RF Power Transistor -- MAPC-A4021-AB000	The MAPC-A4021 is a 130 W package amplifier fully matched to 50 Ohm at both input and output ports. This amplifier is optimized for 7.7 - 8.5 GHz Satcom applications.
RF Power Transistor -- MAPC-A4030-AB000	The MAPC-A4030 is a Gallium nitride (GaN) amplifier designed specifically with high efficiency and high power for the 3.1 - 3.5 GHz S-Band radar band. The amplifier is matched to...
RF Power Transistor -- MHT1803A	The MHT1803A 300 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating from 1.8 to 50 MHz. Features Characterized from 30 to 50...
RF Power Transistor -- MMRF1050HR6	The MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.
RF Power Transistor -- MMRF5018HSR5	The MMRF5018HSR5 is a 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high...
RF Power Transistor -- MRF300AN RF Power Transistor -- MRF300BN	The MRF300AN and MRF300BN are RF LDMOS Transistors targeting industrial scientific, and medical as well as Radio applications below 250MHz. The new TO-247 package devices feature mirror image drain and...
RF Power Transistor -- MRFE6VP5600HR5	The MRFE6VP5600HR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HR6	The MRFE6VP5600HR6 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HSR5	The MRFE6VP5600HSR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP6300HR5	The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFX035HR5	The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from...
RF Power Transistor -- MRFX1K80HR5	The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease...
RF Power Transistor -- MRFX1K80NR5	The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease...
RF Power Transistor -- NPA1006	The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5...
RF Power Transistor -- NPT2018	The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W...
RF Power Transistor -- NPT2021	The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W...
RF Power Transistor -- PTAC240502FC-V1-R0	The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
RF Power Transistor -- PTFC270051M-V2-R1K	The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
RF Power Transistor -- PTFC270101M-V1-R1K	The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
RF Power Transistor -- PTRA082808NF-V1-R5	The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PTRA083818NF-V1-R5	The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA084808NF-V1-R5	The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA087008NB-V1-R5	The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with advanced LDMOS process, this...
RF Power Transistor -- PTRA093818NF-V1-R5	The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA094808NF-V1-R5	The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PTRA097008NB-V1-R2	The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PTVA030121EA-V1-R0	The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.
RF Power Transistor -- PTVA035002EV-V1-R0 RF Power Transistor -- PTVA035002EV-V1-R250	The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
RF Power Transistor -- PTVA043502EC-V1-R0	The PTVA043502EC is a LDMOS FET designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with...
RF Power Transistor -- PTVA043502FC-V1-R0	The PTVA043502FC is a LDMOS FET designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with...
RF Power Transistor -- PTVA047002EV-V1-R0	The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
RF Power Transistor -- PTVA082407NF-V2-R5	The PTVA082407NF is a 240-watt LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and...
RF Power Transistor -- PTVA084007NF-V1-R5	The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design and...
RF Power Transistor -- PTVA092407NF-V2-R5	The PTVA092407NF is a 240-watt LDMOS FET manufactured with 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and...
RF Power Transistor -- PTVA101K02EV-V1-R0	The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
RF Power Transistor -- PTVA102001EA-V1-R0	The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with...
RF Power Transistor -- PTVA104501EH-V1-R0	The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
RF Power Transistor -- PTVA120121M-V1-R1K	The PTVA120121M LDMOS FET is a 12-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
RF Power Transistor -- PTVA120251EA-V2-R0	The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with...
RF Power Transistor -- PTVA120252MTV1-R1K	The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
RF Power Transistor -- PTVA120501EA-V1-R0	The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
RF Power Transistor -- PTVA123501EC-V2-R0	The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package. Manufactured...
RF Power Transistor -- PTVA123501FC-V1-R0	The PTVA123501FC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package with...
RF Power Transistor -- PTVA127002EV-V1-R0 RF Power Transistor -- PTVA127002EV-V1-R250	The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
RF Power Transistor -- PXAD184218FV-V1-R0	The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
RF Power Transistor -- PXAD214218FV-V1-R0	The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features...
RF Power Transistor -- PXAE183708NB-V1-R0	The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXAE213708NB-V1-R2	The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PXFC191507FC-V1-R0	The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXFC192207FH-V3-R0	The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXFE181507FC-V1-R0	The PXFE181507FC is a 175-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- MRF137	The RF MOSFET Line 30W, to 400MHz, 28 V. Designed for wideband large signal output and drive stages up to 400 MHz range.
RF Power Transistor -- TA9110K RF Power Transistor -- TA9110KMTRPBF	The TA9110K is a broadband GaN power transistor capable ofdelivering 6W CW from 30MHz to 4.0GHz frequency band. Thetransistor can be used at lower frequencies with reduced outputpower. The input...
RF Power Transistor -- TA9210D RF Power Transistor -- TA9210DMTRPBF	The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and...
RF Power Transistor -- TA9310E	The TA9310E is a broadband GaN power transistor capable of delivering 20W CW from 500MHz to 4.0GHz frequency band. The transistor can be used at lower frequencies with reduced output...
RF Power Transistor -- TA9410E	The TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band. The input and output can be matched for best power and...
RF Power Transistor -- VRF150	The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF151	The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF151G	The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters...
RF Power Transistor -- VRF154FL	The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
RF Power Transistor -- VRF157FL	The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
RF Power Transistor -- VRF2933	The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF2944	The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- MRFE6VP61K25GSR5	These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input...
RF Power Transistor -- MMRF5014HR5	This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high...
RF Power Transistor -- MRF24G300HSR5	This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear...
RF Power Transistor -- MRF8VP13350GNR3	This 350 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of 350 W CW...
RF Power Transistor -- MRF13750HR5 RF Power Transistor -- MRF13750HSR5	This 750 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of CW or pulse...
RF Power Transistor -- MRF101AN RF Power Transistor -- MRF101BN	This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits...
RF Power Transistor -- MRFE8VP8600HR5 RF Power Transistor -- MRFE8VP8600HSR5	This high power transistor is designed for use in UHF TV broadcast applications. The device has an integrated input matching network for better power distribution and is ideal for use...
RF Power Transistor -- MMRF1320GNR1	This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows...
RF Power Transistor -- MRFE6VP61K25HR6 RF Power Transistor -- MRFE6VP61K25HSR5	This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and...
RF Power Transistor -- MRFX600GSR5 RF Power Transistor -- MRFX600HR5	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design supports frequency use from 1.8...
RF Power Transistor -- MRFE6VP6600GNR3 RF Power Transistor -- MRFE6VP6600NR3	This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- MRF1K50HR5	This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications.
RF Power Transistor -- MMRF1308HR5	This high ruggedness device is designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. It's...
RF Power Transistor -- MMRF1310HR5 RF Power Transistor -- MMRF1310HSR5	This high ruggedness device is designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications.
RF Power Transistor -- MRF1K50GNR5	This high ruggedness device, MRF1K50GNR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MRF1K50NR5	This high ruggedness device, MRF1K50NR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MMRF1314GSR5	This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
RF Power Transistor -- MRF6V12500GSR5	This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control.
RF Power Transistor -- PH1617-2	Wireless Bipolar Power Transistors
RF Power Transistor -- WST33H0NC	WST33H0NC is a 300W packaged, partially-matched transistor utilizing high performance, 50V, 0.25um GaN on SiC production process. The WST33H0NC operates from 2.4-2.5 GHz and targets microwave heating applications. Under class-C...

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