Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Product Name Notes
RF Power Transistor -- CHZ015A-QEG/20 15W L-Band Driver. GaN HEMT on Sic in SMD leadless package. The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a...
RF Power Transistor -- CHZ180A-SEB/26 180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions...
RF Power Transistor -- D2219UK 2½W, 10dB gain @ 1GHz. Excellent surface-mount part for hand-held applications.
RF Power Transistor -- D1028UK 300W, 13dB gain @175MHz. The leading MOSFET for high linearity transmitters.
RF Power Transistor -- D1002UK 40W, 16dB gain @ 175MHz. General purpose RF power MOSFET
RF Power Transistor -- CG2H80030D-GP4 CG2H80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on Cree’s 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties compared to silicon or gallium arsenide, including...
RF Power Transistor -- CG2H80045D-GP4 CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CG2H80060D-GP4 CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CG2H80120D-GP4 CG2H80120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH09120F CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA...
RF Power Transistor -- CGH21120F CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz...
RF Power Transistor -- CGH21240F CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA...
RF Power Transistor -- CGH25120F CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,...
RF Power Transistor -- CGH27015F CGH27015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015F ideal for VHF, Comms, 3G,...
RF Power Transistor -- CGH27015P CGH27015P is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,...
RF Power Transistor -- CGH27030F CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for VHF, Comms,...
RF Power Transistor -- CGH27030P CGH27030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030P ideal for VHF, Comms,...
RF Power Transistor -- CGH27030S CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,...
RF Power Transistor -- CGH27060F CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms,...
RF Power Transistor -- CGH31240F CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band...
RF Power Transistor -- CGH35015F CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which...
RF Power Transistor -- CGH35030F CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-3.9GHz WiMAX...
RF Power Transistor -- CGH35060F2 CGH35060F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 ideal for 3.1-3.5 GHz...
RF Power Transistor -- CGH35060P2 CGH35060P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060P2 ideal for 3.1-3.5 GHz...
RF Power Transistor -- CGH35240F CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band...
RF Power Transistor -- CGH40006P CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40006S CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40010F CGH40010F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40010P CGH40010P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40025F CGH40025F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40025P CGH40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40035F CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40045F CGH40045F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40090PP CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40120F CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40120P CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH40180PP CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGH55015F2
RF Power Transistor -- CGH55030F2
CGH55015F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed...
RF Power Transistor -- CGH55015P2 CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015P2 ideal for C-band pulsed...
RF Power Transistor -- CGH55030P2 CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030P2 ideal for C-band pulsed...
RF Power Transistor -- CGH60008D-GP4 CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH60015D-GP4 CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH60030D-GP4 CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH60060D-GP4 CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGH60120D-GP4 CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV14250F CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 -...
RF Power Transistor -- CGHV14250P CGHV14250P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250P ideal for 1.2 -...
RF Power Transistor -- CGHV14500F CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 -...
RF Power Transistor -- CGHV14500P CGHV14500P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500P ideal for 1.2 -...
RF Power Transistor -- CGHV14800F CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800F ideal for 1.2 -...
RF Power Transistor -- CGHV1F006S CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV1F025S CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV1J006D-GP4 CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers...
RF Power Transistor -- CGHV1J025D-GP4 CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers...
RF Power Transistor -- CGHV1J070D-GP4 CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers...
RF Power Transistor -- CGHV27015S CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,...
RF Power Transistor -- CGHV27060MP CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no...
RF Power Transistor -- CGHV31500F CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 -...
RF Power Transistor -- CGHV35060MP CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz...
RF Power Transistor -- CGHV35150F CGHV35150F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150F ideal for 2.9 -...
RF Power Transistor -- CGHV35150P CGHV35150P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150P ideal for 2.9 -...
RF Power Transistor -- CGHV35400F CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 -...
RF Power Transistor -- CGHV37400F CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 -...
RF Power Transistor -- CGHV40030F CGHV40030F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV40030P CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L,...
RF Power Transistor -- CGHV40050F CGHV40050F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40050P CGHV40050P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40100P CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40100F CGHV40100F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40180F CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40180P CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40200PP CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of...
RF Power Transistor -- CGHV40320D-GP4 CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV50200F CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications,...
RF Power Transistor -- CGHV59070F CGHV59070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety...
RF Power Transistor -- CGHV59070P CGHV59070P is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety...
RF Power Transistor -- CGHV59350F CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2 -...
RF Power Transistor -- CGHV60040D-GP4 CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV60075D5-GP4 CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV60170D-GP4 CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,...
RF Power Transistor -- CGHV96050F1 CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
RF Power Transistor -- CGHV96050F2 CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
RF Power Transistor -- CGHV96100F2 CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to...
RF Power Transistor -- CGHV96130F CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies.
RF Power Transistor -- CGHV35120F Cree’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1...
RF Power Transistor -- MAGX000035-0100 GaN Wideband 10W CW/Pulsed Transistor in Plastic Package DC-3.5 GHz. The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the wide RF frequency capability, reliable high voltage operation...
RF Power Transistor -- MAGX-011086 GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high...
RF Power Transistor -- D1004UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
RF Power Transistor -- D2216UK Gold metallized multi-purpose silicon DMOS RF FET 15W 12.5V 500 MHz push-pull
RF Power Transistor -- GTVA107001EC-V1 GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced...
RF Power Transistor -- GTVA126001EC-V1 GTVA126001EC is a 600-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced...
RF Power Transistor -- DMD1028 New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz
RF Power Transistor -- DRF1400 RF MOSFET performance can be severely limited by the driver selection. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be...
RF Power Transistor -- LET9045S
RF Power Transistor -- LET9060S
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
RF Power Transistor -- CHK8015-99F
RF Power Transistor -- CHK9013-99F/00
RF Power Transistor -- CHK9014-99F/00
RF Power Transistor -- CHKA011-SXA
RF Power Transistor -- CHZ8012-QJA
RF Power Transistor -- CHZ9012-QFA
RF Power Transistor -- D1001UK
RF Power Transistor -- D1003UK
RF Power Transistor -- D1005UK
RF Power Transistor -- D1007UK
RF Power Transistor -- D1008UK
RF Power Transistor -- D1009UK
RF Power Transistor -- D1010UK
RF Power Transistor -- D1011UK
RF Power Transistor -- D1011UKT/R
RF Power Transistor -- D1012UK
RF Power Transistor -- D1013UK
RF Power Transistor -- D1014UK
RF Power Transistor -- D1016UK
RF Power Transistor -- D1017UK
RF Power Transistor -- D1018UK
RF Power Transistor -- D1020UK
RF Power Transistor -- D1021UK
RF Power Transistor -- D1022UK
RF Power Transistor -- D1023UK
RF Power Transistor -- D1025UK
RF Power Transistor -- D1029UK
RF Power Transistor -- D1030UK
RF Power Transistor -- D1034UK
RF Power Transistor -- D1040UK
RF Power Transistor -- D1053UK
RF Power Transistor -- D1094UK
RF Power Transistor -- D1203UK
RF Power Transistor -- D2001UK
RF Power Transistor -- D2002UK
RF Power Transistor -- D2003UK
RF Power Transistor -- D2004UK
RF Power Transistor -- D2005UK
RF Power Transistor -- D2006UK
RF Power Transistor -- D2007UK
RF Power Transistor -- D2008UK
RF Power Transistor -- D2009UK
RF Power Transistor -- D2012UK
RF Power Transistor -- D2013UK
RF Power Transistor -- D2014UK
RF Power Transistor -- D2015UK
RF Power Transistor -- D2019UK
RF Power Transistor -- D2020UK
RF Power Transistor -- D2021UK
RF Power Transistor -- D2081UK.FT/R
RF Power Transistor -- D2089UK
RF Power Transistor -- D2201UK
RF Power Transistor -- D2202UK
RF Power Transistor -- D2203UK
RF Power Transistor -- D2205UK
RF Power Transistor -- D2207UK
RF Power Transistor -- D2208UK
RF Power Transistor -- D2210UK
RF Power Transistor -- D2211UK
RF Power Transistor -- D2212UK
RF Power Transistor -- D2213UK
RF Power Transistor -- D2214UK
RF Power Transistor -- D2219UKT/R
RF Power Transistor -- D2220UK
RF Power Transistor -- D2221UK
RF Power Transistor -- D2224UK
RF Power Transistor -- D2225UK
RF Power Transistor -- D2229UK
RF Power Transistor -- D2229UKT/R
RF Power Transistor -- D2230UK
RF Power Transistor -- D2241UK
RF Power Transistor -- D2254UK
RF Power Transistor -- D2282UK.F
RF Power Transistor -- D2290UK
RF Power Transistor -- D2294UK
RF Power Transistor -- D5001UK
RF Power Transistor -- D5002UK
RF Power Transistor -- D5006UK
RF Power Transistor -- D5011UK
RF Power Transistor -- D5017UK
RF Power Transistor -- D5030UK
RF Power Transistor -- D8605SM
RF Power Transistor -- DMD1020
RF Power Transistor -- DRF1211
RF Power Transistor -- DRF1410
RF Power Transistor -- DRF1510
RF Power Transistor -- DU1215S
RF Power Transistor -- DU2805S
RF Power Transistor -- DU2810S
RF Power Transistor -- DU28120T
RF Power Transistor -- DU28120V
RF Power Transistor -- DU28200M
RF Power Transistor -- DU2820S
RF Power Transistor -- DU2840S
RF Power Transistor -- DU2860T
RF Power Transistor -- DU2860U
RF Power Transistor -- DU2880T
RF Power Transistor -- DU2880U
RF Power Transistor -- DU2880V
RF Power Transistor -- FH2164
RF Power Transistor -- GTRA214602FC-V1
RF Power Transistor -- GTVA107001FCV1R
RF Power Transistor -- HVV1011-035
RF Power Transistor -- LET9045STR
RF Power Transistor -- LET9045TR
RF Power Transistor -- LF2805A
RF Power Transistor -- LF2810A
RF Power Transistor -- MAPH-000066-FL0
RF Power Transistor -- MAPHST0045
RF Power Transistor -- MAPHST0049
RF Power Transistor -- MAPR-002729-170
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- CGHV27030S The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal...
RF Power Transistor -- CHK080A-SRA The CHK080A-SRA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHK8013-99F/00 The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar...
RF Power Transistor -- CHKA011A-SXA The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited...
RF Power Transistor -- CHZ015AA-QEG/20 The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well...
RF Power Transistor -- DC35GN-15-Q4 The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN...
RF Power Transistor -- DRF1200 The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1201 The DRF1201 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1203 The DRF1203 hybrid includes a high power gate driver and the power MOSFET. The driver output can be configured as Inverting and Non-Inverting. It was designed to provide the system...
RF Power Transistor -- DRF1300 The DRF1300 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Power Transistor -- DRF1301 The DRF1301 is a push-pull hybrid containing two high power gate drivers and two power MOSFETs. It was designed to provide the system designer increased flexibility, higher performance, and lowered...
RF Power Transistor -- GTRA262802FC-V2 The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency,...
RF Power Transistor -- GTRA263902FC-V2 The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTRA362002FC-V1 The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
RF Power Transistor -- GTRA362802FC-V1 The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
RF Power Transistor -- GTRA364002FC-V1 The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
RF Power Transistor -- GTRA374902FC-V1 The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTRA384802FC-V1 The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency,...
RF Power Transistor -- GTVA101K42EV-V1 The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, highefficiency device in a thermally-enhanced package...
RF Power Transistor -- GTVA104001FA-V1 The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and...
RF Power Transistor -- GTVA123501FA-V1 The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and...
RF Power Transistor -- GTVA212701FA-V2 The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching, high efficiency, and...
RF Power Transistor -- GTVA220701FA-V1 The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA261701FA-V1 The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA261802FC-V1 The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package...
RF Power Transistor -- GTVA262701FA-V2 The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced...
RF Power Transistor -- GTVA262711FA-V2 The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA263202FC-V1 The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
RF Power Transistor -- GTVA311801FA-V1 The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching, high efficiency, and...
RF Power Transistor -- GTVA355001EC-V1 The GTVA355001EC is a 500-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2900 to 3500 MHz frequency band. It features input and output matching, high...
RF Power Transistor -- LET16045C The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed...
RF Power Transistor -- LET20030C The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. The LET20030C is designed...
RF Power Transistor -- LET9045C The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed...
RF Power Transistor -- LET9045F The LET9045F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045F is designed...
RF Power Transistor -- LET9120 The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor. The LET9120 is designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz.
RF Power Transistor -- MAGX-100027-015
RF Power Transistor -- MAGX-100027015S
The MAGX-100027-015S0P is a high power GaN on Silicon HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027-050 The MAGX-100027-050C0P is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027050C The MAGX-100027-050CTP is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak...
RF Power Transistor -- MAGX-100027-100 The MAGX-100027-100C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 100 W...
RF Power Transistor -- MAGX-100027100C The MAGX-100027-100CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...
RF Power Transistor -- MAGX-100027-300 The MAGX-100027-300C0P is high power GaN onSi HEMT device optimized for DC - 2.7 GHzfrequency operation. The device supports both CWand pulsed operation with peak output power levelsof 300 W...
RF Power Transistor -- MAGX-100027300C The MAGX-100027-300CTP is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power...

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