PH1214-110M is a NPN silicon microwave power transistor designed for radar pulsed applications at 1.2-1.4 GHz with 110 W output power under 150 µs pulses at 10% duty cycle. It uses a hermetic metal/ceramic package and operates in common base, broadband Class C configuration with internal input and output impedance matching. The transistor has a peak collector current of 10.5 A, collector-emitter breakdown voltage of 70 V, and junction temperature rating of 200 °C. It delivers 7.4 dB minimum power gain and 50% collector efficiency at 40 V supply with 20 W input power. Thermal resistance is 0.5 °C/W. The device is RoHS compliant and exhibits load mismatch tolerance up to 3:1 VSWR and stability up to 1.5:1 VSWR.
Radar Power Transistors
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | PH1214-110M |
| Product Name | RF Power Transistor |
| Package Type | Ceramic Flanged |
