The MMRF1014NT1 is an N-channel LDMOS transistor for Class A/AB amplifiers up to 2000 MHz, in a PLD-1.5 plastic package with a backside source pad. It handles up to 68 Vdc drain-source voltage and 12 Vdc gate-source voltage, with a maximum junction temperature of 150 °C. Thermal resistance is 8.5-8.8 °C/W. It delivers 18 dB power gain at 1960 MHz and 19 dB at 900 MHz with 4 W PEP output, and 33% drain efficiency. The device withstands a 5:1 VSWR and includes on-chip RF feedback and ESD protection meeting Human Body Model Class 1C. Moisture sensitivity is level 3 per JESD22-A113. Supplied in tape and reel, 1000 units per 7-inch reel.
Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MMRF1014NT1 |
| Product Name | RF Power Transistor |
| Package Type | Plastic SMT |
