TDK Corporation RF Power Transistor MRF157

Description
Designed primarily for linear large-signal output stages to 80 MHz.
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Description
Designed primarily for linear large-signal output stages to 80 MHz.
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Datasheet
Datasheet Summary
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The MRF157 is a linear RF power MOSFET designed for large-signal output stages up to 80 MHz. It is specified for 50 V operation at 30 MHz with a typical output power of 600 W, 21 dB power gain, and 45% efficiency. The device is mounted in a package suitable for high-power RF applications, though the exact package type and dimensions are not stated. Gate protection requires external components as no internal zener diode is provided. The part is not rated for medical, lifesaving, or life-sustaining applications.

Datasheet Summary
Powered by GS/AI

The MRF157 is a linear RF power MOSFET designed for large-signal output stages up to 80 MHz. It is specified for 50 V operation at 30 MHz with a typical output power of 600 W, 21 dB power gain, and 45% efficiency. The device is mounted in a package suitable for high-power RF applications, though the exact package type and dimensions are not stated. Gate protection requires external components as no internal zener diode is provided. The part is not rated for medical, lifesaving, or life-sustaining applications.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - MRF157 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
MRF157
RF Power Transistor MRF157
Designed primarily for linear large-signal output stages to 80 MHz.

Designed primarily for linear large-signal output stages to 80 MHz.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number MRF157
Product Name RF Power Transistor
Output Power 600 watts
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