The MAPC-A4030 is a gallium nitride (GaN) amplifier for the 3.1-3.5 GHz S-band radar band, delivering 700 W output power with 59.2% drain efficiency and 11.7 dB large signal gain. It features internal 50-ohm matching and operates with a 65 V drain voltage. The device is housed in a ceramic/metal flange package type AC-587BH-2, requiring flange grounding for RF, DC, and thermal performance. It supports operating temperatures from -40°C to +125°C, has a junction temperature limit of +225°C, and meets RoHS compliance. Thermal resistance from junction to case is 0.12 °C/W. The part is ESD sensitive, rated HBM Class 3A and CDM Class C3.
The MAPC-A4030 is a Gallium nitride (GaN) amplifier designed specifically with high efficiency and high power for the 3.1 - 3.5 GHz S-Band radar band.
The amplifier is matched to 50-Ohms on the input and 50-Ohms on the output. At the core of MAPC-A4030 is the high power density 65 V GaN-on-silicon carbide (SiC) manufacturing process. The amplifier is supplied in a ceramic/metal flange package of type AC-587BH-2
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MAPC-A4030-AB000 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
