The VRF2933MP is a gold-metallized silicon n-channel RF power transistor in a thermally enhanced M177 package, measuring 1.140 inches in height and 0.270 inches in width, designed for broadband commercial and military applications requiring high power and gain. It supports 300W output power at 30MHz with 22dB typical gain and 50V drain voltage, operates with a 3:1 load VSWR without degradation, and features a maximum junction temperature of 200°C. The device has a drain-source breakdown voltage of 170V, continuous drain current of 40A, and junction-to-case thermal resistance of 0.27°C/W. It is RoHS compliant and available as a matched pair with gate threshold voltage tightly controlled between 2.900V and 4.400V.
RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation di
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | VRF2933MP |
| Product Name | RF Power Transistor |
| Output Power | 300 watts |
