The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. It is housed in a flangeless package with dimensions of 1.500 inches by 0.750 inches and has a drain-source voltage rating of 170 V and a continuous drain current of 60 A. The device dissipates up to 1350 W with a junction-to-case thermal resistance of 0.13°C/W and operates with a maximum junction temperature of 200°C. It delivers 600 W output power at 30 MHz with 17 dB typical gain and 45% drain efficiency, and meets RoHS compliance. Beryllium oxide is present in the ceramic between leads and the mounting flange, requiring careful handling. The package features a common source configuration with three pins for drain, source, and gate.
The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | VRF154FL |
| Product Name | RF Power Transistor |
| Output Power | 600 watts |
