RF Mosfet HEMT 28V 225mA 0Hz ~ 4GHz 13dB
Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF MOSFET HEMT 28V
HEMT N-CH 28V 25W DC-4000MHZ
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors | RF MOSFET Transistors |
| Product Number | 1465-1415-ND | NPT1012B | NPT1012B | NPT1012B |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | RF FETs, MOSFETs |
| Transistor Technology / Material | GaN | HEMT | ||
| Package Type | Ceramic Flanged | |||
| Power Gain | 13 dB | 13 dB |
