Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Mosfet HEMT 28V 200mA 3.3GHz ~ 3.8GHz 10.5dB 1.7W 8-SOIC-EP
RF MOSFET HEMT 28V 8SOIC
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | NPT35015D | 1465-1418-ND | NPT35015D |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Plastic SMT | "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" | Surface Mount |
| Power Gain | 11 dB |
