PH2729-25M is a NPN silicon microwave power transistor designed for radar pulsed applications at 2.7-2.9 GHz, delivering 25 W output power with 45% collector efficiency under 100 µs pulse and 10% duty cycle conditions. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a peak collector current of 4.0 A and a collector-emitter breakdown voltage of 60 V, with a thermal resistance of 1.25 °C/W and maximum junction temperature of 200 °C. It is RoHS compliant.
Radar Power Transistors
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | PH2729-25M |
| Product Name | RF Power Transistor |
| Package Type | Ceramic Flanged |
