The TA9410E is a broadband GaN power transistor designed to deliver 25 W CW output power from 20 MHz to 3.0 GHz. It is packaged in an 8-pin DFN package measuring 6.00 x 5.00 x 0.75 mm, with a bottom-side thermal paddle that must be grounded for proper operation. The device operates with a 50 V drain supply and achieves a P3dB output power of 44 dBm at 1000 MHz with 57% power added efficiency. It meets RoHS, REACH, and halogen-free compliance standards. Absolute maximum ratings include a drain-source voltage of 150 V, gate voltage range of -10 to +2.0 V, and maximum junction temperature of 225 °C. Operating temperature range is -40 °C to +85 °C, with thermal resistance from junction to case of 5.0 °C/W.
The TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band. The input and output can be matched for best power and efficiency for the desired band.
The TA9410E is packaged in a compact, low cost Quad Flat No lead (QFN) 5x6x0.8mm, 8 leads plastic package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | TA9410E |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
