PH3134-10M is a NPN silicon microwave power transistor designed for radar pulsed applications at 3.1-3.4 GHz with 10W output power, 100µs pulse width, and 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage up to 60V, peak collector current of 1.2A, and a thermal resistance of 2.5°C/W. It delivers 8.0dB minimum power gain and 35% collector efficiency under test conditions. The transistor is RoHS compliant and meets junction temperature ratings up to 200°C.
Radar Power Transistors
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | PH3134-10M |
| Product Name | RF Power Transistor |
| Package Type | Ceramic Flanged |
