The MRF1K50NR5 is a high-ruggedness N-channel enhancement-mode lateral MOSFET for RF power amplification in industrial, scientific, medical, broadcast, aerospace, and mobile radio applications from 1.8 to 500 MHz. It is housed in an OM-1230-4L plastic package with an exposed source terminal on the backside. It supports continuous power output of 1500 W at 50 V DC and operates with a maximum junction temperature of +225 °C. The device has a thermal resistance from junction to case of 0.068 °C/W and includes integrated ESD protection rated for 2500 V human body model and 2000 V charge device model. It meets moisture sensitivity level 3 per JESD22-A113 and is qualified for high VSWR conditions with no degradation under 65:1 mismatch at 230 MHz with 15 W peak drive. The part is compliant with RoHS and operates with a gate-source voltage range of -6.0 V to +10 V.
This high ruggedness device, MRF1K50NR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MRF1K50NR5 |
| Product Name | RF Power Transistor |
| Package Type | Plastic Flangeless |
