Richardson RFPD RF Power Transistor PH1214-25M

Description
Radar Power Transistors
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Description
Radar Power Transistors
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Datasheet
Datasheet Summary
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PH1214-25M is a NPN silicon microwave power transistor for radar pulsed applications, operating at 1.2-1.4 GHz with a 25 W output power under 150 µs pulse and 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device supports a peak collector current of 2.8 A, collector-emitter voltage of 70 V, and power dissipation of 67 W at 25°C. Thermal resistance is 2.6 °C/W, with a collector efficiency of 50% and power gain of 9.5 dB across the band. It includes diffused emitter ballasting resistors, gold metallization, and is RoHS compliant.

Datasheet Summary
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PH1214-25M is a NPN silicon microwave power transistor for radar pulsed applications, operating at 1.2-1.4 GHz with a 25 W output power under 150 µs pulse and 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device supports a peak collector current of 2.8 A, collector-emitter voltage of 70 V, and power dissipation of 67 W at 25°C. Thermal resistance is 2.6 °C/W, with a collector efficiency of 50% and power gain of 9.5 dB across the band. It includes diffused emitter ballasting resistors, gold metallization, and is RoHS compliant.

Suppliers

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Description
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RF Power Transistor - PH1214-25M - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH1214-25M
RF Power Transistor PH1214-25M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH1214-25M
Product Name RF Power Transistor
Package Type Ceramic Flanged
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