The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down fl ange. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
RF Mosfet LDMOS 50V 150mA 1.03GHz ~ 1.09GHz 21dB 900W H-36275-4
RF Mosfet LDMOS 50V 150mA 1.03GHz ~ 1.09GHz 21dB 900W H-36275-4
RF MOSFET LDMOS 50V H-36275-4
| Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | PTVA101K02EV-V1-R0 | 1465-PTVA101K02EV-V1-R0TR-ND | PTVA101K02EV-V1-R0 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | Ceramic Flanged | H-36275-4 | H-36275-4 |
