The MRF300AN is an RF LDMOS transistor for HF to VHF applications up to 250 MHz, delivering 330 W CW output power at 50 Vdc with 75.5% drain efficiency. Packaged in a TO-247-3L case, it features a mirror pinout with gate, source, and drain on pins 1, 2, and 3 respectively. It withstands voltage standing wave ratios above 65:1 without degradation and operates with a junction temperature up to 175 °C. Thermal resistance junction-to-case is 0.55 °C/W under CW conditions. The device includes integrated ESD protection meeting HBM class 2 (2500 V) and CDM class C3 (1200 V), complies with moisture sensitivity level 0 (225 °C reflow), and is backed by a 15-year product longevity commitment.
The MRF300AN and MRF300BN are RF LDMOS Transistors targeting industrial scientific, and medical as well as Radio applications below 250MHz. The new TO-247 package devices feature mirror image drain and gate pins so they can be used together in Push-Pull configuration.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MRF300AN |
| Product Name | RF Power Transistor |
| Package Type | Plastic Through-Hole |
