PH2731-5M is a NPN silicon microwave power transistor designed for radar pulsed applications at 2.7-3.1 GHz, delivering 5 W output power with 30% collector efficiency under 100 µs pulses at 10% duty cycle. It operates in common base configuration with internal input and output impedance matching, housed in a hermetic metal/ceramic package. The device supports a peak collector current of 0.7 A, collector-emitter breakdown voltage of 65 V, and thermal resistance of 3.5 °C/W. It exhibits minimum power gain of 7.0 dB and load mismatch tolerance up to 3:1 VSWR. The transistor is RoHS compliant and rated for junction temperatures up to 200 °C.
Radar Power Transistors
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | PH2731-5M |
| Product Name | RF Power Transistor |
| Package Type | Ceramic Flanged |
