RF power LDMOS transistor designed for narrowband and broadband applications from 1.8 to 2000 MHz in ISM, broadcast, and aerospace systems. Housed in the NI-360H-2L package, it operates with a drain-source voltage up to 133 Vdc and a junction temperature range of -40°C to +225°C. It features extreme ruggedness withstand VSWR greater than 65:1 without degradation, integrated stability enhancements, low thermal resistance of 1.4 °C/W, and extended ESD protection meeting Human Body Model (2000 V), Machine Model (200 V), and Charge Device Model (1200 V). The part is supplied in tape and reel packaging with 32 mm tape width and a 13-inch reel, and meets RoHS standards.
RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MRFE6VS25LR5 |
| Product Name | RF Power Transistor |
| Package Type | Ceramic Flanged |
