The PH1214-2M is a NPN silicon microwave power transistor designed for radar pulsed applications at 1.2-1.4 GHz with a 100 µs pulse and 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device delivers 2.0 W output power at 28 V collector voltage with 40% collector efficiency and 7.0 dB power gain. It supports peak collector current of 0.5 A, has a collector-emitter breakdown voltage of 65 V, and a junction temperature rating of 200 °C. The transistor demonstrates load mismatch tolerance up to 3:1 VSWR and stability at 1.5:1 VSWR. It is RoHS compliant and has a thermal resistance of 17 °C/W.
Radar Power Transistors
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | PH1214-2M |
| Product Name | RF Power Transistor |
| Package Type | Ceramic Flanged |
