Integra Technologies RF Power Transistor IGN1011L1200

Description
L-BAND-1200W -TRANSISTOR
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Description
L-BAND-1200W -TRANSISTOR
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - IGN1011L1200 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
IGN1011L1200
RF Power Transistor IGN1011L1200
L-BAND-1200W -TRANSISTOR

L-BAND-1200W -TRANSISTOR

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IGN1011L1200 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IGN1011L1200
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IGN1011L1200
RF MOSFET HEMT 50V PL84A1

RF MOSFET HEMT 50V PL84A1

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Transistors RF Transistors
Product Number IGN1011L1200 IGN1011L1200
Product Name RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material GaN
Package Type Flanged PL84A1
Power Gain 16.8 dB
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