RF power field effect transistor designed for pulsed applications between 1200 and 1400 MHz with 1% to 12% duty cycle. It is packaged in a CASE465A-06, STYLE1 NI-780S case with dimensions of 20.45 to 20.70 mm in length, 9.65 to 9.91 mm in width, and 1.45 to 1.70 mm in height. The device operates with a maximum drain-source voltage of 100 Vdc and a maximum junction temperature of 225°C. It features internal matching, integrated ESD protection rated at Class 1C for Human Body Model, and can sustain a 5:1 VSWR at 50 Vdc and 1400 MHz with no degradation in output power. It is RoHS compliant.
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MRF6V14300HSR5 |
| Product Name | RF Power Transistor |
| Package Type | Ceramic Flangeless |
