The NPT25100P is a GaN on Si HEMT D-mode power amplifier optimized for 2.1-2.7 GHz operation, delivering 90 W CW output power and 125 W peak envelope power with 16.5 dB gain and 26% drain efficiency. It is housed in an earless flange package with thermally enhanced design, RoHS compliant, and qualified for operating temperatures from -40°C to +85°C. Thermal resistance is 1.75 °C/W, and it is rated for a maximum junction temperature of 200°C. The device is suitable for defense, avionics, and wireless infrastructure applications.
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | NPT25100P |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
