The MW6S004NT1 is an N-channel enhancement-mode lateral MOSFET for RF power amplification in base station applications up to 2000 MHz. It is packaged in a CASE 466-03, STYLE 1 plastic case measuring 6.48-6.73 mm by 5.72-5.97 mm by 1.65-1.83 mm. The device supports a maximum drain-source voltage of 68 Vdc and operates with a junction temperature up to 150 °C. At 1960 MHz and 28 V, it delivers 18 dB power gain, 33% drain efficiency, and -34 dBc IMD with 4 W PEP output. At 900 MHz, gain is 19 dB with -39 dBc IMD. It is RoHS compliant, features integrated ESD protection rated HBM Class 1C, and is moisture sensitive level 3 per JESD 22-A113. Supplied in tape and reel, 1000 units per 7-inch reel.
Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MW6S004NT1 |
| Product Name | RF Power Transistor |
| Package Type | Plastic SMT |
