The MAPC-A1100 is a high-power GaN on Silicon Carbide HEMT D-mode amplifier designed for DC to 3.5 GHz operation, delivering at least 65 W output power in CW and pulsed modes. It is housed in an air cavity ceramic package (AC-360S-2) with an exposed thermal ground pad on the bottom. The device operates at 50 V drain-source voltage with a quiescent gate voltage range of -3.5 V to -2.0 V and supports a case operating temperature range of -40°C to +85°C. It meets JEDEC moisture sensitivity level 3 requirements and is ESD classified as HBM Class 1A and CDM Class C3. The part is compatible with the MABC-11040 bias controller.
The MAPC-A1100 is a high power GaN on SiliconCarbide HEMT D-mode amplifier suitable forDC - 3.5 GHz frequency operation. The devicesupports both CW and pulsed operation with outputpower levels of at least 65 W (48.1 dBm) in an aircavity ceramic package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | MAPC-A1100-AS000 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
