Richardson RFPD RF Power Transistor PH2731-20M

Description
Radar Power Transistors
Request a Quote
Description
Radar Power Transistors
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

PH2731-20M is a NPN silicon microwave power transistor for radar pulsed applications, operating at 2.7-3.1 GHz with 20 W output power, 100 µs pulse width, and 10% duty cycle. It is housed in a hermetic metal/ceramic package and operates in common base configuration with internal impedance matching. Maximum collector-emitter voltage is 65 V, peak collector current is 1.85 A, and power dissipation is 70 W at 25°C. Thermal resistance is 2.5 °C/W. Collector efficiency exceeds 45% across the band, with power gain of 8.2 dB minimum. The device meets RoHS compliance and has a junction temperature rating of 200 °C.

Datasheet Summary
Powered by GS/AI

PH2731-20M is a NPN silicon microwave power transistor for radar pulsed applications, operating at 2.7-3.1 GHz with 20 W output power, 100 µs pulse width, and 10% duty cycle. It is housed in a hermetic metal/ceramic package and operates in common base configuration with internal impedance matching. Maximum collector-emitter voltage is 65 V, peak collector current is 1.85 A, and power dissipation is 70 W at 25°C. Thermal resistance is 2.5 °C/W. Collector efficiency exceeds 45% across the band, with power gain of 8.2 dB minimum. The device meets RoHS compliance and has a junction temperature rating of 200 °C.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - PH2731-20M - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH2731-20M
RF Power Transistor PH2731-20M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH2731-20M
Product Name RF Power Transistor
Package Type Ceramic Flanged
Unlock Full Specs
to access all available technical data

Similar Products

RF Power Transistor - PH1214-2M - Richardson RFPD
Specs
Package Type Ceramic Flanged
Power Gain 7 dB
Output Power 2 watts
View Details
RF Power Transistor - CHKA012BSYA - Richardson RFPD
Specs
Transistor Technology / Material GaN
Package Type Hermetic Metal/Ceramic
Power Gain 19 dB
View Details
RF Power Transistor - MRF393 - Richardson RFPD
Specs
Package Type Ceramic Flanged
Power Gain 9.5 dB
Output Power 100 watts
View Details
RF Power Transistor - DU2880V - Richardson RFPD
Specs
Transistor Type MOSFET RF
Power Gain 13 dB
Output Power 80 watts
View Details