Richardson RFPD RF Power Transistor PH2731-20M

Description
Radar Power Transistors
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Description
Radar Power Transistors
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Datasheet
Datasheet Summary
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PH2731-20M is a NPN silicon microwave power transistor for radar pulsed applications, operating at 2.7-3.1 GHz with 20 W output power, 100 µs pulse width, and 10% duty cycle. It is housed in a hermetic metal/ceramic package and operates in common base configuration with internal impedance matching. Maximum collector-emitter voltage is 65 V, peak collector current is 1.85 A, and power dissipation is 70 W at 25°C. Thermal resistance is 2.5 °C/W. Collector efficiency exceeds 45% across the band, with power gain of 8.2 dB minimum. The device meets RoHS compliance and has a junction temperature rating of 200 °C.

Datasheet Summary
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PH2731-20M is a NPN silicon microwave power transistor for radar pulsed applications, operating at 2.7-3.1 GHz with 20 W output power, 100 µs pulse width, and 10% duty cycle. It is housed in a hermetic metal/ceramic package and operates in common base configuration with internal impedance matching. Maximum collector-emitter voltage is 65 V, peak collector current is 1.85 A, and power dissipation is 70 W at 25°C. Thermal resistance is 2.5 °C/W. Collector efficiency exceeds 45% across the band, with power gain of 8.2 dB minimum. The device meets RoHS compliance and has a junction temperature rating of 200 °C.

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RF Power Transistor - PH2731-20M - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH2731-20M
RF Power Transistor PH2731-20M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH2731-20M
Product Name RF Power Transistor
Package Type Ceramic Flanged
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