Richardson RFPD RF Power Transistor PH1214-55EL

Description
Radar Power Transistors
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Description
Radar Power Transistors
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Datasheet
Datasheet Summary
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PH1214-55EL is a NPN silicon microwave power transistor designed for radar pulsed applications at 1.2 to 1.4 GHz, delivering 55 W output power with 50% collector efficiency under 1 ms pulse, 10% duty cycle conditions. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage of up to 58 V and peak collector current of 7.0 A, with a maximum junction temperature of 200 °C and thermal resistance of 0.8 °C/W. It is RoHS compliant and designed for broadband Class C operation with load mismatch tolerance up to 3:1 and stability up to 1.5:1.

Datasheet Summary
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PH1214-55EL is a NPN silicon microwave power transistor designed for radar pulsed applications at 1.2 to 1.4 GHz, delivering 55 W output power with 50% collector efficiency under 1 ms pulse, 10% duty cycle conditions. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage of up to 58 V and peak collector current of 7.0 A, with a maximum junction temperature of 200 °C and thermal resistance of 0.8 °C/W. It is RoHS compliant and designed for broadband Class C operation with load mismatch tolerance up to 3:1 and stability up to 1.5:1.

Suppliers

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Product
Description
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RF Power Transistor - PH1214-55EL - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH1214-55EL
RF Power Transistor PH1214-55EL
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH1214-55EL
Product Name RF Power Transistor
Package Type Ceramic Flanged
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